Datasheet > MM5450_06

MM5450_06

更新时间： 2024-11-15 04:15:03

品牌	Logo	应用领域
麦瑞 - MICREL		显示驱动器
页数	文件大小	规格书
6页	742K
描述
LED Display Driver

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中文翻译

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数据手册

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MM5450_06 数据手册

PRELIMINARY

SemiWell Semiconductor

2N7000

Logic N-Channel MOSFET

Features

3. Drain

Symbol

{

■ R_DS(on)(Max 5 Ω )@V_GS=10V

R_DS(on)(Max 5.3Ω )@V_GS=4.5V

●

◀

▲

■ Gate Charge (Typical 0.5nC)

■ Maximum Junction Temperature Range (150°C)

●

2. Gate

{

1. Source

TO-92

General Description

This Power MOSFET is produced using planar DMOS technology.

And this Power MOSFET is well suited for Battery switch, Load

switch, Motor controller and other small signal switches.

Absolute Maximum Ratings

Symbol

V_DSS

I_D

Parameter

Value

Units

Drain to Source Voltage

Continuous Drain Current(@T_A= 25°C)

Drain Current Pulsed

200

I_DM

(Note 1)

500

V_GS

Gate to Source Voltage

±20

0.4

Total Power Dissipation Single Operation (T_A=25°C)

Total Power Dissipation Single Operation (T_A=70°C)

Operating Junction Temperature & Storage Temperature

°C

P_D

3.2

_STG,T_J

- 55 ~ 150

Maximum Lead Temperature for soldering purpose,

1/8 from Case for 10 seconds.

T_L

300

°C

Thermal Characteristics

Value

Typ.

Symbol

Parameter

Units

Min.

Max.

R_θJA

Thermal Resistance, Junction-to-Ambient

312.5

°C/W

January, 2003. Rev. 0.

1/6

12 3 4 5 6

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