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MM24256-BMW5T

更新时间: 2024-01-18 11:09:41
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
17页 137K
描述
256/128 Kbit Serial IC Bus EEPROM Without Chip Enable Lines

MM24256-BMW5T 数据手册

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M24256  
M24128  
256/128 Kbit Serial I²C Bus EEPROM  
Without Chip Enable Lines  
2
Compatible with I C Extended Addressing  
2
Two Wire I C Serial Interface  
Supports 400 kHz Protocol  
Single Supply Voltage:  
– 4.5V to 5.5V for M24xxx  
8
– 2.5V to 5.5V for M24xxx-W  
Hardware Write Control  
1
BYTE and PAGE WRITE (up to 64 Bytes)  
PDIP8 (BN)  
RANDOM and SEQUENTIAL READ Modes  
Self-Timed Programming Cycle  
0.25 mm frame  
Automatic Address Incrementing  
Enhanced ESD/Latch-Up Behavior  
More than 100,000 Erase/Write Cycles  
More than 40 Year Data Retention  
8
8
1
1
SO8 (MN)  
150 mil width  
SO8 (MW)  
200 mil width  
DESCRIPTION  
2
These I C-compatible electrically erasable pro-  
grammable memory (EEPROM) devices are orga-  
nized as 32Kx8 bits (M24256) and 16Kx8 bits  
(M24128), and operate down to 2.5 V (for the -W  
version of each device).  
Figure 1. Logic Diagram  
The M24256B, M24128B and M24256A are also  
available, and offer the extra functionality of the  
chip enable inputs. Please see the separate data  
sheets for details of these products.  
V
CC  
The M24256 and M24128 are available in Plastic  
Dual-in-Line and Plastic Small Outline packages.  
These memory devices are compatible with the  
2
I C extended memory standard. This is a two wire  
SCL  
WC  
SDA  
M24256  
M24128  
Table 1. Signal Names  
SDA  
Serial Data/Address Input/  
Output  
SCL  
WC  
Serial Clock  
Write Control  
Supply Voltage  
Ground  
V
SS  
AI01882  
V
V
CC  
SS  
June 2001  
1/17  

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