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MM1Z5V1W-T PDF预览

MM1Z5V1W-T

更新时间: 2024-11-16 18:02:23
品牌 Logo 应用领域
RECTRON 二极管
页数 文件大小 规格书
5页 76K
描述
Zener Diode,

MM1Z5V1W-T 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.76
二极管类型:ZENER DIODEJESD-609代码:e3
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MM1Z5V1W-T 数据手册

 浏览型号MM1Z5V1W-T的Datasheet PDF文件第2页浏览型号MM1Z5V1W-T的Datasheet PDF文件第3页浏览型号MM1Z5V1W-T的Datasheet PDF文件第4页浏览型号MM1Z5V1W-T的Datasheet PDF文件第5页 
MM1Z2V0W  
THRU  
MM1Z75W  
Silicon Planar Zener Diodes  
FEATURES  
PINNING  
• Total power dissipation: Max. 500mW.  
PIN  
1
2
DESCRIPTION  
Cathode  
Anode  
• Wide zener reverse voltage range 2.0V to 75V.  
• Small plastic package suitable for surface mounted design.  
• Tolerance approximately±5%  
2
MECHANICAL DATA  
Case: SOD-123  
1
Terminals: Solderable per MIL-STD-750, Method 2026  
Approx. Weight:16mg 0.00056oz  
Simplified outline SOD-123 and symbol  
Absolute Maximum Ratings And Characteristics Ta = 25 °C)  
Symbol  
Parameter  
Value  
500  
Unit  
mW  
V
Power Dissipation  
Ptot  
VF  
Forward Voltage at IF = 10 mA  
0.9  
(1)  
Typical thermal resistance juncting to ambient  
Operating and Storage Temperature Range  
RθJA  
°C/W  
°C  
340  
Tj, Tstg  
-55 ~ +150  
(1) Thermal resistance from junction to ambient at P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper areas pads.  
(MM1Z2V0W THRU MM1Z75W)  
RATING AND CHARACTERISTICS CURVES  
Fig.1 Maximum Continuous Power Derating  
Fig.2 Typical Transient Thermal Impedance  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
2000  
1000  
100  
10  
25  
50  
75  
100  
125  
150  
175  
0.01  
0.1  
1
10  
100  
Tc,Case Temperature (°C)  
t, Pulse Durationsec)  
2019-03/85  
REV:O  

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