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MM196 PDF预览

MM196

更新时间: 2024-11-27 22:46:11
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美高森美 - MICROSEMI /
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1页 69K
描述
6 MOSFET Multi-Chip Module

MM196 数据手册

  
MM196  
6 MOSFET Multi-Chip Module  
S A N T A A N A D I V I S I O N  
PRELIMINARY SPECIFICATION  
KEY FEATURES  
DESCRIPTION  
The MM196 is a Multi-Chip Module, MCM, incorporating 6 independent  
MOSFET die into a convenient BGA package. This device is also available  
as discrete individual packaged Powermite3, see Microsemi data sheet  
UPF1N100. This device is also available as bare die, see Microsemi data  
sheet MSAFA1N100D. The MM196 allows users to externally connect the  
MOSFETs via a motherboard or next assembly substrate into any  
configuration desired. Custom variations of this product incorporating other  
Microsemi protection die and/or passive components are available by  
contacting the factory.  
!"Miniature size, Multi-Chip  
Module, MCM  
!"Convenient mounting, Ball Grid  
Array, BGA  
!"Sn63/Pb37 solder bumps  
(Alternate attach methods  
available)  
!"Maximum switch voltage 1000V  
APPLICATIONS/BENEFITS  
!"Three phase switching  
!"AC-DC converters  
!"Applications utilizing multiple  
MOSFET die in multiple or array  
configurations  
IMPORTANT:  
For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
INDIVIDUAL COMPONENT SPECIFICATIONS  
Components  
Manufacturer  
Part Number  
Schematic  
Q1 – Q6  
Microsemi Santa Ana  
MSAFA1N100D  
Characteristics  
Note: Refer to individual data sheets for component performance.  
If there are conflicting requirements, this document takes precedence.  
Maximum Ratings @ 25ºC  
(UNLESS OTHERWISE SPECIFIED)  
Parameter  
S ym b o l  
Min  
Max  
Unit  
Peak Repetitive Drain  
to Source Voltage  
Operating Temperature  
Range  
VDSS  
1000  
V
Top  
10  
55  
º C  
Maximum Ratings @ 25ºC  
(UNLESS OTHERWISE SPECIFIED)  
C on dit ion s  
TYP  
Max  
Unit  
Description  
Configuration and Dimensions  
Top View  
Drain-Source On-State  
V
= 10 Vdc,  
GS  
I = 1 mAdc  
12.5  
13.5  
ohm  
R
Resistance,  
DS(ON)1  
0.38” typical  
D
V
GS  
= 7 Vdc  
,
0.35”  
Drain-Source On-State  
typical  
I
= 5…150  
D
mAdc  
Microsemi  
MM196  
12.5  
ohm  
R
Resistance,  
DS(ON)2  
T
º
= 37 C  
C
0.050”  
max  
Copyright 2000  
MSC1589.PDF ,2000-09-20  
Microsemi  
Page 1  
Santa Ana Division  
2830 S. Fairview Street, CA. 92704, 714-979-8220, Fax: 714-557-5989  

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