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MLX83203 PDF预览

MLX83203

更新时间: 2024-11-25 01:16:47
品牌 Logo 应用领域
迈来芯 - MELEXIS /
页数 文件大小 规格书
35页 1399K
描述
Automotive NFET pre-drivers

MLX83203 数据手册

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MLX83202/MLX83203  
Automotive NFET pre-drivers  
Features and Benefits  
Application Examples  
Level shifting between micro-controller PWM outputs  
and 3 external N-FET half-bridges  
100% PWM operation  
Low offset, low drift, fast current sense amplifier  
Operating range VSUP = [4.5, 28] V, 45V Abs. Max  
Fault interrupt & feedback to microcontroller  
Under & overvoltage protection  
Fail-safe applications  
Low-torque control applications  
BLDC sine wave applications (PMSM)  
Overtemperature protection  
VDS and VGS external FET monitoring  
Sleep mode with low quiescent current  
Compatible with 3V and 5V micro-controllers  
Charge-pump provides NFET reverse polarity drive  
Ordering Information  
Part No.  
MLX83202  
MLX83202  
MLX83203  
MLX83203  
Temperature Code  
K (-40°C to 125°C)  
K
K
K
Package Code  
Option code Comment  
LQ (QFN32, 5x5mm)  
PF (TQFP48, 7x7mm)  
LQ (QFN32, 5x5mm)  
PF (TQFP48, 7x7mm)  
AAA 000  
AAA 000  
AAA 000  
AAA 000  
25 Ohm 3HB (*)  
25 Ohm 3HB (*)  
8 Ohm 3HB  
8 Ohm 3HB (*)  
(*): Derivatives of MLX83203KLQAAA-000 available on high volume request  
1 Functional Diagram  
2 General Description  
The MLX83202/MLX83203 family of pre-drivers is  
designed to drive high-current N-type FET 3-phase  
motor control applications.  
The built-in EEPROM allows extensive configurability  
of the pre-driver without the need for external  
resistors and SPI interface programming. This  
reduces the package pin count to only 32.  
All output voltages are monitored for failure  
conditions. The microcontroller is informed of the  
failure condition via a fast serial interface.  
The device comprises a current shunt amplifier, with  
a high gain bandwidth (GBW), offering a fast settling  
time with low noise. This makes the pre-drivers ideal  
for precise torque control applications like e.g.  
electrical power steering and brake by wire.  
A combination of bootstrap and charge pump enables  
driving  
6
NFETs, with gate charges up to  
400nC/NFET with a minimum of device self-heating.  
The IC reset level below 4.5V allows for low-voltage  
operation.  
3901083203  
Rev 2.2  
Page 1 of 35  
Prelim. Data Sheet  
4 Dec 2013  
 
 

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