Datasheet > MLX83203

MLX83203

更新时间： 2024-01-01 01:10:37

品牌	Logo	应用领域
迈来芯 - MELEXIS		/
页数	文件大小	规格书
35页	1399K
描述
Automotive NFET pre-drivers

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中文翻译

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数据手册

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MLX83203 数据手册

MLX83202/MLX83203

Automotive NFET pre-drivers

Features and Benefits

Application Examples



Level shifting between micro-controller PWM outputs

and 3 external N-FET half-bridges

100% PWM operation

Low offset, low drift, fast current sense amplifier

Operating range VSUP = [4.5, 28] V, 45V Abs. Max

Fault interrupt & feedback to microcontroller

Under & overvoltage protection



Fail-safe applications

Low-torque control applications

BLDC sine wave applications (PMSM)



Overtemperature protection

VDS and VGS external FET monitoring

Sleep mode with low quiescent current

Compatible with 3V and 5V micro-controllers

Charge-pump provides NFET reverse polarity drive

Ordering Information

Part No.

MLX83202

MLX83203

Temperature Code

K (-40°C to 125°C)

Package Code

Option code Comment

LQ (QFN32, 5x5mm)

PF (TQFP48, 7x7mm)

LQ (QFN32, 5x5mm)

PF (TQFP48, 7x7mm)

AAA 000

25 Ohm 3HB (*)

8 Ohm 3HB

8 Ohm 3HB (*)

(*): Derivatives of MLX83203KLQAAA-000 available on high volume request

1 Functional Diagram

2 General Description

The MLX83202/MLX83203 family of pre-drivers is

designed to drive high-current N-type FET 3-phase

motor control applications.

The built-in EEPROM allows extensive configurability

of the pre-driver without the need for external

resistors and SPI interface programming. This

reduces the package pin count to only 32.

All output voltages are monitored for failure

conditions. The microcontroller is informed of the

failure condition via a fast serial interface.

The device comprises a current shunt amplifier, with

a high gain bandwidth (GBW), offering a fast settling

time with low noise. This makes the pre-drivers ideal

for precise torque control applications like e.g.

electrical power steering and brake by wire.

A combination of bootstrap and charge pump enables

driving

NFETs, with gate charges up to

400nC/NFET with a minimum of device self-heating.

The IC reset level below 4.5V allows for low-voltage

operation.

3901083203

Rev 2.2

Page 1 of 35

Prelim. Data Sheet

4 Dec 2013

12 3 4 5 6 7...35

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