5秒后页面跳转
MLL14KESD51C PDF预览

MLL14KESD51C

更新时间: 2024-10-28 23:10:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 瞬态抑制器二极管电视局域网
页数 文件大小 规格书
4页 410K
描述
SURFACE MOUNT TVS

MLL14KESD51C 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DO-213AB包装说明:HERMETIC SEALED, GLASS, MELF-2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.92Is Samacsys:N
最小击穿电压:56.7 V外壳连接:ISOLATED
最大钳位电压:94.5 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-213ABJESD-30 代码:O-LELF-R2
JESD-609代码:e0最大非重复峰值反向功率耗散:4000 W
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:BIDIRECTIONAL最大功率耗散:1.25 W
认证状态:Not Qualified最大重复峰值反向电压:51 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:TIN LEAD
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MLL14KESD51C 数据手册

 浏览型号MLL14KESD51C的Datasheet PDF文件第2页浏览型号MLL14KESD51C的Datasheet PDF文件第3页浏览型号MLL14KESD51C的Datasheet PDF文件第4页 
MLL14KESD5.0 thru MLL14KESD170A  
SURFACE MOUNT TVS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
These surface mount Transient Voltage Suppressor (TVS) devices feature  
the ability to clamp dangerous high voltage short-term transients such as  
produced by direct or radiated electro-static discharge phenomena before  
entering sensitive component regions of a circuit design. They are small  
economical TVSs targeted primarily for short term transients below a few  
microseconds while still achieving significant peak-pulse-power capability  
as seen in Figure 1.  
DO-213AB  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
Excellent protection in clamping direct ESD level  
transients in excess of 40,000 V per MIL-STD-750,  
Method 1020 (approx. 150 ns exponential wave)  
Absorbs ESD level transients of 14,000 Watts per  
MIL-STD-750, Method 1020 (approximately 150 ns  
exponential wave, or one microsecond transients  
up to 4000 watts. See Figure #1 and #2 for overall  
transient Peak Pulse Power.  
Clamps Transients in less than 100 picoseconds  
Working Stand-off Voltage range of 5V to 170V  
Hermetic DO-213AB package. Also available in  
axial-leaded DO-41package (see separate data  
sheet for 14KESD5.0 series)  
Protects Sensitive circuits from short duration fast  
rise time transients such as Electrostatic Discharge  
(ESD) or Electrical Fast Transients (EFT)  
Minimal capacitance (See Figure #3)  
Small surface-mount footprint for high density  
mounting  
Bidirectional features available by adding a “C” or  
“CA” suffix to part number  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
4000 Watts for One Microsecond Square Wave or  
14,000 watts per ESD Wave form of MIL-STD-750,  
method 1020.  
CASE: Hermetically sealed DO-213AB glass MELF  
package  
TERMINALS: End caps, tin-lead plated solderable  
per MIL-STD-750, method 2026  
POLARITY: Cathode indicated by band.  
MARKING: Cathode band only  
TAPE & REEL optional: Standard per EIA-481-B  
with 12 mm tape, 1500 per 7 inch reel or 5000 per  
13 inch reel (add “TR” suffix to part number)  
See Surge Rating curve in Figures #1 and 2.  
Operating and storage temperature –65oC to 175oC  
Thermal Resistance: 40 ºC/W junction to end cap, or  
120ºC/W junction to ambient when mounted on FR4  
PC board (1 oz Cu) with recommended footprint (see  
last page)  
Steady-State Power: 1.50 watts at TEC < 115oC, or  
1.25 watts at TA = 25ºC when mounted on FR4 PC  
board and recommended footprint as described for  
thermal resistance (also see Figure 1)  
WEIGHT: 0.05 grams  
See package dimensions on last page  
Derate at 22.8 W/oC above 25oC for PPP (1µs) and at  
15 mW/oC above 75oC for dc power.  
Forward Surge Current 500 amps for 1µs at TL =  
25oC (rise time > 100 ns).  
Copyright 2002  
Microsemi  
Page 1  
10-03-2003 REV A  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

与MLL14KESD51C相关器件

型号 品牌 获取价格 描述 数据表
MLL14KESD51CA MICROSEMI

获取价格

SURFACE MOUNT TVS
MLL14KESD51CAE3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 4000W, 51V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MLL14KESD51CAE3TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 4000W, 51V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MLL14KESD51CATR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 4000W, 51V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MLL14KESD51CE3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 4000W, 51V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MLL14KESD51CE3TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 4000W, 51V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MLL14KESD51CTR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 4000W, 51V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MLL14KESD51CTRE3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 51V V(RWM), Bidirectional,
MLL14KESD51E3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 4000W, 51V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MLL14KESD51E3TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 4000W, 51V V(RWM), Bidirectional, 1 Element, Silicon, DO-2