Datasheet > MLL1.4KESD6.5CE3TR

MLL1.4KESD6.5CE3TR

更新时间： 2024-11-19 20:42:35

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
4页	210K
描述
Trans Voltage Suppressor Diode, 400W, 6.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-213AA, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MLL1.4KESD6.5CE3TR 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	DO-213AA	包装说明：	O-LELF-R2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.84	最小击穿电压：	7.22 V
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-213AA	JESD-30 代码：	O-LELF-R2
JESD-609代码：	e3	最大非重复峰值反向功率耗散：	400 W
元件数量：	1	端子数量：	2
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	BIDIRECTIONAL	最大功率耗散：	0.5 W
认证状态：	Not Qualified	最大重复峰值反向电压：	6.5 V
表面贴装：	YES	技术：	AVALANCHE
端子面层：	MATTE TIN	端子形式：	WRAP AROUND
端子位置：	END	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MLL1.4KESD6.5CE3TR 数据手册

浏览型号MLL1.4KESD6.5CE3TR的Datasheet PDF文件第2页

浏览型号MLL1.4KESD6.5CE3TR的Datasheet PDF文件第3页

浏览型号MLL1.4KESD6.5CE3TR的Datasheet PDF文件第4页

MLL1.4KESD5.0 thru MLL1.4KESD170CA, e3

SURFACE MOUNT TVS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These small surface mount TVS devices feature the ability to clamp

dangerous high voltage short-term transients such as produced by directed

or radiated electrostatic discharge phenomena before entering sensitive

component regions of a circuit design. They are small economical transient

voltage suppressors targeted primarily for short-term transients below a few

microseconds while still achieving significant peak-pulse-power capability

as illustrated in Figure #1.

DO-213AA

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Excellent protection in clamping direct ESD level

transients in excess of 15,000 V per MIL-STD-750,

Method 1020 (approx. 150 ns exponential wave)

•

Protects Sensitive circuits from short duration fast

rise time transients such as Electrostatic Discharge

(ESD) or Electrical Fast Transients (EFT)

Absorbs ESD level transients* of 1400 Watts per MIL-

STD-750, Method 1020 (approx. 150 ns exponential

wave, or one microsecond transients up to 400 watts.

See Figure #1 and #2 for overall transient Peak Pulse

Power.

Low inherent capacitance for high-frequency

applications (See Figure #4)

•

Small surface mount foot print

Bidirectional features available by adding a “C” or

“CA” suffix

•

Clamps Transients in less than 100 picoseconds

Working Stand-off Voltage range of 5 V to 170 V

Hermetic DO-213AA Package. Also available in axial-

leaded DO-35 package (see separate data sheet for

1.4KESD5.0 series)

•

RoHS Compliant devices available by adding “e3” sufffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

400 Watts for One Microsecond Square Wave or

1400 watts per ESD Wave form of MIL-STD-750,

method 1020

•

CASE: Hermetically sealed glass DO-213AA surface

mount package

•

FINISH: Tin-lead or RoHS compliant matte-Tin

plating solderable per MIL-STD-750, method 2026

•

See Surge Rating curves in Figures #1, 2 and 3

Operating and storage temperature –65^oC to 175^oC

•

POLARITY: Banded end is cathode

WEIGHT: 0.04 grams (typical)

MARKING: Cathode band only

THERMAL RESISTANCE: 150^oC/W junction to end

cap

•

DC power dissipation 500 mW at T_EC≤ 100^oC

TAPE & REEL option: Standard per EIA-481-B (add

“TR” suffix to part number)

Derate at 2.3 W/^oC above 25^oC for P_PP(1μs) and at

6.67 mW/^oC above 100^oC for dc power

•

See package dimension on last page

•

Forward Surge Current 50 amps for 1μs at T_L= 25^oC

(rise time > 100 ns)

3-29-2006 REV B

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

下载PDF

与MLL1.4KESD6.5CE3TR相关器件

型号	品牌	获取价格	描述	数据表
MLL1.4KESD6.5CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 6.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MLL1.4KESD6.5CTRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 6.5V V(RWM), Bidirectional,
MLL1.4KESD6.5E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MLL1.4KESD6.5E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MLL1.4KESD6.5TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MLL1.4KESD6.5TRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 6.5V V(RWM), Unidirectional,
MLL1.4KESD60	MICROSEMI	获取价格	SURFACE MOUNT TVS
MLL1.4KESD60A	MICROSEMI	获取价格	SURFACE MOUNT TVS
MLL1.4KESD60AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 60V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MLL1.4KESD60AE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 60V V(RWM), Unidirectional, 1 Element, Silicon, DO-2

与MLL1.4KESD6.5CE3TR相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

23
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

15
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

45
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

44

产品中心

服务支持

精选活动

关于我们

帮助中心

MLL1.4KESD6.5CE3TR

MLL1.4KESD6.5CE3TR 技术参数

MLL1.4KESD6.5CE3TR 数据手册

与MLL1.4KESD6.5CE3TR相关器件

与MLL1.4KESD6.5CE3TR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MLL1.4KESD6.5CE3TR

MLL1.4KESD6.5CE3TR 技术参数

MLL1.4KESD6.5CE3TR 数据手册

与MLL1.4KESD6.5CE3TR相关器件

与MLL1.4KESD6.5CE3TR相关文章

您还可以找

您在本页遇到什么问题？