Datasheet > MLL1.4KESD60CAE3

MLL1.4KESD60CAE3

更新时间： 2024-11-19 20:42:35

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
4页	210K
描述
Trans Voltage Suppressor Diode, 400W, 60V V(RWM), Bidirectional, 1 Element, Silicon, DO-213AA, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

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MLL1.4KESD60CAE3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	DO-213AA	包装说明：	O-LELF-R2
针数：	2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.84	Is Samacsys：	N
最小击穿电压：	66.7 V	外壳连接：	ISOLATED
最大钳位电压：	126.4 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-213AA	JESD-30 代码：	O-LELF-R2
JESD-609代码：	e3	最大非重复峰值反向功率耗散：	400 W
元件数量：	1	端子数量：	2
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	BIDIRECTIONAL	最大功率耗散：	0.5 W
认证状态：	Not Qualified	最大重复峰值反向电压：	60 V
子类别：	Transient Suppressors	表面贴装：	YES
技术：	AVALANCHE	端子面层：	MATTE TIN
端子形式：	WRAP AROUND	端子位置：	END
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

MLL1.4KESD60CAE3 数据手册

MLL1.4KESD5.0 thru MLL1.4KESD170CA, e3

SURFACE MOUNT TVS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These small surface mount TVS devices feature the ability to clamp

dangerous high voltage short-term transients such as produced by directed

or radiated electrostatic discharge phenomena before entering sensitive

component regions of a circuit design. They are small economical transient

voltage suppressors targeted primarily for short-term transients below a few

microseconds while still achieving significant peak-pulse-power capability

as illustrated in Figure #1.

DO-213AA

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Excellent protection in clamping direct ESD level

transients in excess of 15,000 V per MIL-STD-750,

Method 1020 (approx. 150 ns exponential wave)

•

Protects Sensitive circuits from short duration fast

rise time transients such as Electrostatic Discharge

(ESD) or Electrical Fast Transients (EFT)

Absorbs ESD level transients* of 1400 Watts per MIL-

STD-750, Method 1020 (approx. 150 ns exponential

wave, or one microsecond transients up to 400 watts.

See Figure #1 and #2 for overall transient Peak Pulse

Power.

Low inherent capacitance for high-frequency

applications (See Figure #4)

•

Small surface mount foot print

Bidirectional features available by adding a “C” or

“CA” suffix

•

Clamps Transients in less than 100 picoseconds

Working Stand-off Voltage range of 5 V to 170 V

Hermetic DO-213AA Package. Also available in axial-

leaded DO-35 package (see separate data sheet for

1.4KESD5.0 series)

•

RoHS Compliant devices available by adding “e3” sufffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

400 Watts for One Microsecond Square Wave or

1400 watts per ESD Wave form of MIL-STD-750,

method 1020

•

CASE: Hermetically sealed glass DO-213AA surface

mount package

•

FINISH: Tin-lead or RoHS compliant matte-Tin

plating solderable per MIL-STD-750, method 2026

•

See Surge Rating curves in Figures #1, 2 and 3

Operating and storage temperature –65^oC to 175^oC

•

POLARITY: Banded end is cathode

WEIGHT: 0.04 grams (typical)

MARKING: Cathode band only

THERMAL RESISTANCE: 150^oC/W junction to end

cap

•

DC power dissipation 500 mW at T_EC≤ 100^oC

TAPE & REEL option: Standard per EIA-481-B (add

“TR” suffix to part number)

Derate at 2.3 W/^oC above 25^oC for P_PP(1μs) and at

6.67 mW/^oC above 100^oC for dc power

•

See package dimension on last page

•

Forward Surge Current 50 amps for 1μs at T_L= 25^oC

(rise time > 100 ns)

3-29-2006 REV B

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

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与MLL1.4KESD60CAE3相关器件

型号	品牌	获取价格	描述	数据表
MLL1.4KESD60CAE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 60V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MLL1.4KESD60CA-TR	MICROSEMI	获取价格	BIDIRECTIONAL, SILICON, TVS DIODE, DO-213AA, HERMETIC SEALED, GLASS, 2 PIN
MLL1.4KESD60CATRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 60V V(RWM), Bidirectional,
MLL1.4KESD60CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 60V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MLL1.4KESD60CE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 60V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MLL1.4KESD60CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 60V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MLL1.4KESD60C-TR	MICROSEMI	获取价格	BIDIRECTIONAL, SILICON, TVS DIODE, DO-213AA, HERMETIC SEALED, GLASS, 2 PIN
MLL1.4KESD60CTRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 60V V(RWM), Bidirectional,
MLL1.4KESD60E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 60V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MLL1.4KESD60E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 60V V(RWM), Unidirectional, 1 Element, Silicon, DO-2

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