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ML920L40S

更新时间： 2024-11-23 04:02:31
品牌 Logo 应用领域
三菱 - MITSUBISHI 二极管激光二极管
页数 文件大小 规格书
3页 211K
描述
2.5Gbps InGaAsP DFB LASER DIODE

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ML920L40S 数据手册

 浏览型号ML920L40S的Datasheet PDF文件第2页浏览型号ML920L40S的Datasheet PDF文件第3页 
ML9MXITXSU4BI0SHI SLAESERR IDIEODSES  
Notice : Some parametric limits are subject to change  
2.5Gbps InGaAsP DFB LASER DIODE  
TYPE  
ML925B40F / ML920J40S  
ML925J40F / ML920L40S  
NAME  
DESCRIPTION  
APPLICATION  
ML9XX40 series are uncooled DFB (Distributed Feedback) laser  
diodes for 2.5Gbps transmission emitting light beam at 1470~1610nm.  
λ/4 shifted grating structure is employed to obtain excellent SMSR  
performance under 2.5Gbps modulation. Furthermore, ML9xx40 can  
operate in the wide temperature range from 0oC to 85 oC without any  
temperature control. They are well suited for light source in long  
distance digital transmission application of coarse WDM.  
· 2.5Gbps long-haul transmission  
· Coarse WDM application  
FEATURES  
· λ/4 shifted grating structure  
· Wide temperature range operation (0oC to 85oC)  
· High side-mode-suppression-ratio (typical 45dB)  
· High resonance frequency (typical 11GHz)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Po  
Parameter  
Conditions  
Ratings  
Unit  
Output power  
CW  
---  
6
150  
2
mW  
mA  
V
If  
VRL  
IFD  
Forward current (Laser diode)  
Reverse voltage (Laser diode)  
Forward current (Photo diode)  
Reverse voltage (Photo diode)  
---  
---  
2
20  
mA  
V
VRD  
---  
Tc  
Tstg  
Case temperature  
Storage temperature  
---  
---  
0 to +85  
-40 to +100  
ºC  
ºC  
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC)  
Symbol  
Ith  
Parameter  
Threshold current  
Test conditions  
Min. Typ. Max.  
Unit  
mA  
CW  
CW  
---  
---  
---  
---  
---  
---  
---  
10  
35  
45  
35  
70  
90  
1.1  
15  
40  
<*1>  
<*2>  
Tc=85ºC  
50  
Iop  
Operation current  
CW, Po=5mW  
CW, Po=5mW  
Tc=85ºC  
45  
mA  
<*1>  
<*2>  
80  
100  
1.5  
---  
Vop  
η
Operating voltage  
Slope efficiency  
CW, Po=5mW  
CW, Po=5mW  
CW, Po=5mW <*3>  
CW, Po=5mW  
V
0.17 0.22  
0.15 0.20  
mW/mA  
---  
Peak wavelength  
Side mode suppression ratio  
Side mode suppression ratio(RF)  
<*4>,<*5>  
45  
nm  
dB  
λp  
35  
---  
---  
---  
---  
---  
CW, Po=5mW, Tc=0 to 85ºC  
SMSR  
2.48832Gbps,Ib=Ith, Ipp=40mA  
45  
25  
Beam divergence angle (parallel) <*6> CW, Po=5mW  
(perpendicular) <*6> CW, Po=5mW  
deg.  
deg.  
θ //  
θ ┴  
---  
30  
---  
fr  
Resonance frequency  
2.48832Gbps,Ib=Ith, Ipp=40mA  
---  
11  
---  
GHz  
ps  
2.48832Gbps,Ib=Ith, Ipp=40mA  
tr,tf  
Rise and Fall time <*7>  
---  
80  
120  
20%-80%  
Monitoring output current (PD)  
Dark current (PD)  
Capacitance (PD)  
Im  
Id  
Ct  
0.1  
---  
---  
---  
---  
10  
1.0  
0.1  
20  
mA  
µA  
pF  
CW, Po=5mW,VRD=1V,RL=10Ω  
V
RD=5V  
VRD=5V  
<*1> Applied to ML9xx40-04~09 and -12~17.  
<*2> Applied to ML9xx40-10~11 and -18~19.  
<*3> Applied to ML925J40F and ML920L40S.  
<*6> Beam divergence is not applied to ML925J40F and ML920L40S.  
<*7> Except influence of the 18mm lead.  
MITSUBISHI  
ELECTRIC  
Feb. 2005  
123

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