Datasheet > MJE13003L-V-X-TMS-T

MJE13003L-V-X-TMS-T

更新时间： 2024-11-25 00:40:23

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
9页	409K
描述
NPN SILICON POWER TRANSISTOR

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MJE13003L-V-X-TMS-T 数据手册

UNISONIC TECHNOLOGIES CO., LTD

MJE13003-V

NPN SILICON TRANSISTOR

NPN SILICON POWER

TRANSISTOR

DESCRIPTION

These devices are designed for high-voltage, high-speed

power switching inductive circuits where fall time is critical. They

are particularly suited for 115 and 220V applications in switch

mode.

FEATURES

* Reverse biased SOA with inductive load @ T_C=100°C

* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C

Typical t_C= 290ns @ 1A, 100°C.

* 700V blocking capability

APPLICATIONS

* Switching regulator’s, inverters

* Motor controls

* Solenoid/relay drivers

* Deflection circuits

www.unisonic.com.tw

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QW-R204-034.a

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