是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
风险等级: | 5.56 | Is Samacsys: | N |
最大集电极电流 (IC): | 1.5 A | 集电极-发射极最大电压: | 400 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 36 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 10 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJE13003L-P-E-T92-K | UTC |
获取价格 |
Power Bipolar Transistor | |
MJE13003L-P-E-T92-R | UTC |
获取价格 |
Power Bipolar Transistor | |
MJE13003L-P-E-T9N-B | UTC |
获取价格 |
Power Bipolar Transistor | |
MJE13003L-P-E-T9N-K | UTC |
获取价格 |
Power Bipolar Transistor | |
MJE13003L-P-X-T60-K | UTC |
获取价格 |
NPN SILICON POWER TRANSISTOR | |
MJE13003L-P-X-T6C-A-K | UTC |
获取价格 |
NPN SILICON POWER TRANSISTOR | |
MJE13003L-P-X-T6C-F-K | UTC |
获取价格 |
NPN SILICON POWER TRANSISTOR | |
MJE13003L-P-X-T6S-K | UTC |
获取价格 |
NPN SILICON POWER TRANSISTOR | |
MJE13003L-P-X-T92-B | UTC |
获取价格 |
NPN SILICON POWER TRANSISTOR | |
MJE13003L-P-X-T92-K | UTC |
获取价格 |
NPN SILICON POWER TRANSISTOR |