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MJE13003L-A-T6S-K PDF预览

MJE13003L-A-T6S-K

更新时间: 2024-11-24 14:34:39
品牌 Logo 应用领域
友顺 - UTC 局域网开关晶体管
页数 文件大小 规格书
9页 398K
描述
Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126S, 3 PIN

MJE13003L-A-T6S-K 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:5Is Samacsys:N
最大集电极电流 (IC):1.5 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):14
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):10 MHzBase Number Matches:1

MJE13003L-A-T6S-K 数据手册

 浏览型号MJE13003L-A-T6S-K的Datasheet PDF文件第2页浏览型号MJE13003L-A-T6S-K的Datasheet PDF文件第3页浏览型号MJE13003L-A-T6S-K的Datasheet PDF文件第4页浏览型号MJE13003L-A-T6S-K的Datasheet PDF文件第5页浏览型号MJE13003L-A-T6S-K的Datasheet PDF文件第6页浏览型号MJE13003L-A-T6S-K的Datasheet PDF文件第7页 
UNISONIC TECHNOLOGIES CO., LTD  
MJE13003  
NPN SILICON TRANSISTOR  
NPN SILICON POWER  
TRANSISTOR  
DESCRIPTION  
These devices are designed for high-voltage, high-speed  
power switching inductive circuits where fall time is critical. They  
are particularly suited for 115 and 220V applications in switch  
mode.  
FEATURES  
* Reverse biased SOA with inductive load @ TC=100°C  
* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C  
Typical tC = 290ns @ 1A, 100°C.  
* 700V blocking capability  
APPLICATIONS  
* Switching regulator’s, inverters  
* Motor controls  
* Solenoid/relay drivers  
* Deflection circuits  
www.unisonic.com.tw  
1 of 9  
Copyright © 2014 Unisonic Technologies Co., Ltd  
QW-R204-004.S  

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