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MJB18004D2T4 PDF预览

MJB18004D2T4

更新时间: 2024-01-03 15:13:09
品牌 Logo 应用领域
安森美 - ONSEMI 晶体管
页数 文件大小 规格书
16页 222K
描述
5A, 450V, NPN, Si, POWER TRANSISTOR, D2PAK-3

MJB18004D2T4 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.92外壳连接:COLLECTOR
最大集电极电流 (IC):5 A集电极-发射极最大电压:450 V
配置:SINGLE WITH BUILT-IN DIODE最小直流电流增益 (hFE):18
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):75 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):13 MHz
Base Number Matches:1

MJB18004D2T4 数据手册

 浏览型号MJB18004D2T4的Datasheet PDF文件第2页浏览型号MJB18004D2T4的Datasheet PDF文件第3页浏览型号MJB18004D2T4的Datasheet PDF文件第4页浏览型号MJB18004D2T4的Datasheet PDF文件第5页浏览型号MJB18004D2T4的Datasheet PDF文件第6页浏览型号MJB18004D2T4的Datasheet PDF文件第7页 
ON Semiconductort  
MJB18004D2T4  
High Speed, High Gain Bipolar  
NPN Power Transistor with  
Integrated Collector-Emitter  
Diode and Built-in Efficient  
POWER TRANSISTORS  
5 AMPERES  
1000 VOLTS  
75 WATTS  
Antisaturation Network  
D2PAK For Surface Mount  
The MJB18004D2T4 is state–of–art High Speed High gain Bipolar  
transistor (H2BIP). High dynamic characteristics and lot to lot  
minimum spread (±150 ns on storage time) make it ideally suitable for  
light ballast applications. Therefore, there is no need to guarantee an  
h
FE  
window.  
Main features:  
MARKING DIAGRAM  
Low Base Drive Requirement  
High Peak DC Current Gain (55 Typical) @ I = 100 mA  
Extremely Low Storage Time Min/Max Guarantees Due to the  
H2BIP Structure which Minimizes the Spread  
C
YWW  
MJB  
18004D2  
2
D PAK  
Integrated Collector–Emitter Free Wheeling Diode  
CASE 418B  
STYLE 1  
Fully Characterized and Guaranteed Dynamic V  
CE(sat)  
“6 Sigma” Process Providing Tight and Reproductible Parameter  
Spreads  
Y
WW  
= Year  
= Work Week  
It’s characteristics make it also suitable for PFC application.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
MJB18004D2T4/D  
June, 2001 – Rev. 0  

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