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MIV41002-29

更新时间： 2024-11-25 12:19:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管变容二极管倍频器
页数 文件大小 规格书
1页 148K
描述
MIV41001 ISIS Frequency Multiplier

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中文翻译

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MIV41002-29 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：O-CEMW-N2针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.74
Is Samacsys：N最小击穿电压：55 V
配置：SINGLE二极管电容容差：25%
标称二极管电容：0.4 pF二极管元件材料：SILICON
二极管类型：VARIABLE CAPACITANCE DIODE频带：MILLIMETER WAVE BAND
JESD-30 代码：O-CEMW-N2元件数量：1
端子数量：2封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：ROUND封装形式：MICROWAVE
认证状态：Not Qualified子类别：Varactors
表面贴装：YES端子形式：NO LEAD
端子位置：ENDBase Number Matches：1

MIV41002-29 数据手册

  
GaAs MULTIPLIER DIODES  
ISIS Frequency Multiplier  
®
TM  
MIV41001 – MIV41013  
Features  
●
High Output Powers — Over 5 W at 35 GHz  
●
●
●
●
High Efficiency  
2 and 3 Stack Options  
High Cut-Off Frequency  
Low Thermal Resistance  
Applications  
●
Frequency Multipliers to Beyond 110 GHz  
●
High-Power mmW Transceivers  
●
mmW Phase Arrays  
Description  
●
Drivers for mm Power Amplifiers  
Microsemi’s ISIS frequency multiplier varactors are  
fabricated by epitaxially stacking the P-N junctions in  
GaAs to obtain high power at millimeter wave  
frequencies. The MIV series of ISIS multiplier diodes  
has been designed to have the high cut-off frequency to  
produce very low conversion loss when used in  
appropriately designed circuits. MSC offers 2 and 3  
stacked devices to produce high CW power from 40–  
110 GHz. CW power up to 3 W at 44 GHz  
(conversion loss <3 dB) and 1 W in W band  
(conversion loss <9 dB) are realizable with single  
devices. ISIS diodes are offered in the low parasitic  
(<10 fF), low thermal resistance M29 package and in  
other packages.  
ISIS Diode Schematic (2 Stack)  
ohmic metal  
P+ Layer  
N Layer  
N+ Layer  
P+ Layer  
N Layer  
N+ Layer  
Substrate  
ohmic metal  
Specifications  
2
Breakdown Voltage: 55 V Min.  
@
25°C  
—
3
Breakdown  
Stack ISIS Diodes —  
Stack ISIS Diodes  
Voltage: 75 V Min.  
Junction  
Min.  
Cut-Of  
Typ.  
Junction  
Capacitance  
Zer Bias  
Min.  
Cut-Of  
Typ.  
Capacitance  
Zer Bias  
6
V
f
Package  
Capacitance  
(pF)  
6
V
f
Package  
Capacitance  
(pF)  
Part  
Number  
@
o
(pF)  
Frequency  
(GHz)  
Part  
Number  
@
o
Frequency  
(GHz)  
(pF)  
MIV41011-21  
MIV41012-21  
MIV41013-21  
MIV41011-29  
MIV41012-29  
MIV41013-29  
0.1–0.3  
0.3–0.5  
0.5–1.0  
0.1–0.3  
0.3–0.5  
0.5–1.0  
1000  
700  
0.15  
0.15  
0.15  
0.10  
0.10  
0.10  
MIV41001-21  
MIV41002-21  
MIV41003-21  
MIV41001-29  
MIV41002-29  
MIV41003-29  
0.1–0.3  
0.3–0.5  
0.5–1.0  
0.1–0.3  
0.3–0.5  
0.5–1.0  
1000  
700  
0.15  
0.15  
0.15  
0.10  
0.10  
0.10  
600  
600  
1000  
700  
1000  
700  
600  
600  
IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com  
Specifications are subject to change. Consult factory for the latest information.  
These products are supplied with a RoHS  
complaint Gold finish  
Other package styles are available on request.  
.
These devices are ESD sensitive and must be handled using ESD precautions.  
Microsemi  
Copyright 2008  
Rev: 2009-01-19  
Microwave Products  
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748  
Page 1  
1

中文翻译

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