Datasheet > MIL-PRF-661

MIL-PRF-661

更新时间： 2024-01-25 04:20:45

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	271K
描述
RADIATION HARDENED POWER MOSFET THRU - HOLE ( TO - 254AA )

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MIL-PRF-661 数据手册

THRU-HOLE (TO-254AA)

T^®

Absolute Maximum Ratings

Parameter

PD-91394E

IRHM7460SE

JANSR2N7392 500V

N-CHANNEL

RADIATION HARDENED

POWER MOSFET

REF: MIL-PRF-19500/661

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

JANSR2N7392

IRHM7460SE

100K Rads (Si)

0.32Ω

18A

TO-254AA

International Rectifiers RADHard HEXFET^®MOSFET

technology provides high performance power MOSFETs

for space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been characterized

for both Total Dose and Single Event Effects (SEE). The

combination of low RDS(on) and low gate charge reduces

the power losses in switching applications such as DC to

DC converters and motor control. These devices retain

all of the well established advantages of MOSFETs such

as voltage control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Light Weight

Pre-Irradiation

Units

@ V

= 12V, T = 25°C Continuous Drain Current

= 12V, T = 100°C Continuous Drain Current

11.7

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

250

W/°C

Linear Derating Factor

2.0

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

500

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

3.8

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063 in. (1.6mm) from case for 10 sec.)

9.3 (Typical)

For footnotes refer to the last page

www.irf.com

5/17/01

12 3 4 5 6 7 8

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