生命周期: | Obsolete | 零件包装代码: | SIMM |
包装说明: | SIMM, SSIM72 | 针数: | 72 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.28 | 风险等级: | 5.84 |
访问模式: | FAST PAGE | 最长访问时间: | 60 ns |
其他特性: | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | I/O 类型: | COMMON |
JESD-30 代码: | R-XSMA-N72 | 内存密度: | 335544320 bit |
内存集成电路类型: | FAST PAGE DRAM MODULE | 内存宽度: | 40 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 72 | 字数: | 8388608 words |
字数代码: | 8000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 8MX40 | 输出特性: | 3-STATE |
封装主体材料: | UNSPECIFIED | 封装代码: | SIMM |
封装等效代码: | SSIM72 | 封装形状: | RECTANGULAR |
封装形式: | MICROELECTRONIC ASSEMBLY | 电源: | 5 V |
认证状态: | Not Qualified | 刷新周期: | 2048 |
座面最大高度: | 29.464 mm | 自我刷新: | NO |
最大待机电流: | 0.02 A | 子类别: | Other Memory ICs |
最大压摆率: | 2.4 mA | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子形式: | NO LEAD |
端子节距: | 1.27 mm | 端子位置: | SINGLE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MH8M40NAJ-7 | MITSUBISHI |
获取价格 |
Fast Page DRAM Module, 8MX40, 70ns, CMOS, SIMM-72 |
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MH8S64AKD-10 | MITSUBISHI |
获取价格 |
Synchronous DRAM Module, 8MX64, 8ns, CMOS, DIMM-144 |
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MH8S64AKD-8L | MITSUBISHI |
获取价格 |
Synchronous DRAM Module, 8MX64, 6ns, CMOS, DIMM-144 |
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MH8S64ALD-8 | MITSUBISHI |
获取价格 |
Synchronous DRAM Module, 8MX64, 6ns, CMOS, DIMM-168 |
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MH8S64ALD-8A | MITSUBISHI |
获取价格 |
Synchronous DRAM Module, 8MX64, 6ns, CMOS, DIMM-168 |
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MH8S64AQFC-6 | MITSUBISHI |
获取价格 |
536,870,912-BIT (8,388,608 - WORD BY 64-BIT)SynchronousDRAM |
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MH8S64AQFC-6L | MITSUBISHI |
获取价格 |
536,870,912-BIT (8,388,608 - WORD BY 64-BIT)SynchronousDRAM |
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MH8S64AQFC-7 | MITSUBISHI |
获取价格 |
536,870,912-BIT (8,388,608 - WORD BY 64-BIT)SynchronousDRAM |
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MH8S64AQFC-7L | MITSUBISHI |
获取价格 |
536,870,912-BIT (8,388,608 - WORD BY 64-BIT)SynchronousDRAM |
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MH8S64AQFC-8 | MITSUBISHI |
获取价格 |
536,870,912-BIT (8,388,608 - WORD BY 64-BIT)SynchronousDRAM |
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