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MGA-633P8 PDF预览

MGA-633P8

更新时间: 2024-02-21 14:38:01
品牌 Logo 应用领域
安华高科 - AVAGO 放大器功率放大器
页数 文件大小 规格书
14页 188K
描述
Ultra Low Noise, High Linearity Active Bias Low Noise Amplifi er

MGA-633P8 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SOLCC8,.08,20
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01风险等级:8
特性阻抗:50 Ω构造:COMPONENT
增益:16.5 dB最大输入功率 (CW):20 dBm
JESD-609代码:e3安装特点:SURFACE MOUNT
功能数量:1端子数量:8
最大工作频率:2000 MHz最小工作频率:450 MHz
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:SOLCC8,.08,20
电源:5 V射频/微波设备类型:WIDE BAND MEDIUM POWER
子类别:RF/Microwave Amplifiers最大压摆率:67 mA
表面贴装:YES技术:GAAS
端子面层:Tin (Sn)Base Number Matches:1

MGA-633P8 数据手册

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MGA-633P8  
Ultra Low Noise, High Linearity Active Bias Low Noise Amplifier  
Data Sheet  
Description  
Features  
Avago Technologies’ MGA-633P8 is an economical, easy-  Ultra Low noise Figure  
to-use GaAs MMIC Low Noise Amplifier (LNA). The LNA has  
low noise and high linearity achieved through the use of  
Avago Technologies’ proprietary 0.25um GaAs Enhance-  
 High linearity performance  
[1]  
 GaAs E-pHEMT Technology  
3
ment-mode pHEMT process. It is housed in a miniature  Low cost small package size: 2.0 x 2.0 x 0.75 mm  
3
2.0 x 2.0 x 0.75mm 8-pin Quad-Flat-Non-Lead (QFN)  
 Excellent uniformity in product specifications  
package. It is designed for optimum use from 450MHz up  
 Tape-and-Reel packaging option available  
to 2GHz. The compact footprint and low profile coupled  
with low noise, high gain and high linearity make the  
MGA-633P8 an ideal choice as a low noise amplifier for  
Specifications  
900MHz; 5V, 54mA  
 18 dB Gain  
cellular infrastructure for GSM and CDMA. For optimum  
performance at higher frequency from 1.5GHz to 2.3GHz,  
the MGA-634P8 is recommended, and from 2.3GHz to  
4GHz, the MGA-635P8 is recommended. Both MGA-634P8  
and MGA-635P8 share the same package and pinout as  
MGA-633P8  
 0.37 dB Noise Figure  
 15dB Input Return Loss  
 37 dBm Output IP3  
 22 dBm Output Power at 1dB gain compression  
Pin Configuration and Package Marking  
3
2.0 x 2.0 x 0.75 mm 8-lead QFN  
Applications  
 Low noise amplifier for cellular infrastructure for GSM  
[1]  
[2]  
[8]  
[7]  
[8]  
[7]  
[1]  
[2]  
and CDMA.  
 Other ultra low noise application.  
33X  
[3]  
[4]  
[6]  
[5]  
[6]  
[5]  
[3]  
[4]  
Simplified Schematic  
Top View  
Bottom View  
Vdd  
Pin1 – Vbias  
Pin5 – Not Used  
Pin6 – Not Used  
Pin7 – RFoutput / Vdd  
Pin8 – Not Used  
Centre tab - Ground  
Rbias  
Pin2 – RFinput  
Pin3 – Not Used  
Pin4 – Not Used  
C6  
C4  
R1  
R2  
C5  
C3  
L1  
L2  
Note:  
[1]  
[2]  
[8]  
bias  
Package marking provides orientation and identification  
“33” = Device Code  
“X” = Month Code  
C1  
C2  
RFin  
RFout  
[7]  
[3]  
[4]  
[6]  
[5]  
Notes:  
Attention: Observe precautions for  
handling electrostatic sensitive devices.  
ESD Machine Model = 90 V (Class A)  
ESD Human Body Model = 600 V (Class 1B)  
Refer to Avago Application Note A004R:  
Electrostatic Discharge, Damage and Control.  
The schematic is shown with the assumption that similar PCB is used  
for all MGA-633P8, MGA-634P8 and MGA-635P8.  
Detail of the components needed for this product is shown in Table 1.  
Enhancement mode technology employs positive gate voltage,  
thereby eliminating the need of negative gate voltage associated  
with conventional depletion mode devices.  
Good RF practice requires all unused pins to be earthed.  

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