Datasheet > MGA-637P8

MGA-637P8

更新时间： 2024-02-15 10:46:35

品牌	Logo	应用领域
安华高科 - AVAGO		放大器功率放大器
页数	文件大小	规格书
14页	161K
描述
High Linearity Low Noise Amplifi er

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MGA-637P8 数据手册

MGA-637P8

High Linearity Low Noise Ampliﬁer

Data Sheet

Description

Features

Avago Technologies’ MGA-637P8 is an economical, easy-  High linearity performance.

to-use GaAs MMIC Low Noise Ampliﬁer (LNA). This LNA

has low noise and high linearity achieved through the

use of Avago Technologies’ proprietary 0.25 m GaAs

 Low Noise Figure.

[1]

 GaAs E-pHEMT Technology

Enhancement-mode pHEMT process. It is housed in the  Low cost small package size.

miniature 2.0 x 2.0 x 0.75 mm 8-pin Dual-Flat-Non-Lead

 Integrated with active bias and option to access FET

(DFN) package. The device is designed for optimum use

from 1.5 GHz up to 2.5 GHz. The compact footprint and

low proﬁle coupled with low noise, high gain and high

linearity make this an ideal choice as a low noise ampliﬁer

for cellular infrastructure applications such as LTE, GSM,

CDMA, W-CDMA, CDMA2000 & TD-SCDMA. For optimum

performance at lower frequency from 450 MHz up to

1.5 GHz, MGA-636P8 is recommended. For optimum

performance at higher frequency from 2.5 GHz up to

4 GHz, MGA-638P8 is recommended. All these 3 products,

MGA-636P8, MGA-637P8 and MGA-638P8 share the same

package and pinout conﬁguration.

gate.

 Integrated power down control pin.

Speciﬁcations

1.7 GHz; 4.8 V, 75 mA

 17.3 dB Gain

 0.52 dB Noise Figure

 11 dB Input Return Loss

 22.5 dBm Input IP3

 21.9 dBm Output Power at 1 dB gain compression

Pin Conﬁguration and Package Marking

Applications

2.0 x 2.0 x 0.75 mm 8-lead DFN

 Cellular infrastructure applications such as LTE, GSM,

[1]

[8]

[7]

CDMA, W-CDMA, CDMA2000 & TD-SCDMA.

[8]

[7]

[1]

[2]

[3]

[4]

 Other low noise applications.

37X

GND

[6]

[5]

[3]

[4]

[6]

[5]

Note:

1. Enhancement mode technology employs positive Vgs, thereby

eliminating the need of negative gate voltage associated with con-

ventional depletion mode devices.

TOP VIEW

BOTTOM VIEW

Pin 1 – Not Used

Pin 2 – RFinput

Pin 3 – Vbias2

Pin 5 – Vbias1

Pin 6 – PwrDwn

Pin 7 – RFoutput

Pin 8 – Not Used

Pin 4 – Not Used

Center paddle – GND

Attention: Observe precautions for

handling electrostatic sensitive devices.

ESD Machine Model = 80 V

ESD Human Body Model = 350 V

Refer to Avago Application Note A004R:

Electrostatic Discharge, Damage and Control.

Note:

Package marking provides orientation and identiﬁcation

“37”= Product Code

“X” = Month Code

It is recommended to ground Pin1, 4 and 8 which are Not Used.

12 3 4 5 6 7...14

中文翻译

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与MGA-637P8相关器件

型号	品牌	获取价格	描述	数据表
MGA-637P8-BLKG	AVAGO	获取价格	High Linearity Low Noise Amplifi er
MGA-637P8-TR1G	AVAGO	获取价格	High Linearity Low Noise Amplifi er
MGA-638P8	AVAGO	获取价格	High Linearity Low Noise Amplifi er
MGA-638P8-BLKG	AVAGO	获取价格	High Linearity Low Noise Amplifi er
MGA-638P8-TR1G	AVAGO	获取价格	High Linearity Low Noise Amplifi er
MGA-64135	AGILENT	获取价格	2 - 6 GHz Cascadable GaAs MMIC Amplifier
MGA-645T6-BLKG	AVAGO	获取价格	1500MHz - 3000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, 2 X 1.30 MM, 0.40 MM HEIGHT,
MGA-645T6-TR1G	AVAGO	获取价格	MGA-645T6 Low Noise Amplifier with Bypass/Shutdown Mode in Low Profile Package
MGA-645T6-TR2G	AVAGO	获取价格	1500MHz - 3000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, 2 X 1.30 MM, 0.40 MM HEIGHT,
MGA-64606	AVAGO	获取价格	Low Noise Amplifi er with switchable Bypass/Shutdown Mode in Low Profi le Package

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