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MGA-665P8-TR2 PDF预览

MGA-665P8-TR2

更新时间: 2024-01-28 22:00:41
品牌 Logo 应用领域
安捷伦 - AGILENT 射频和微波射频放大器微波放大器
页数 文件大小 规格书
14页 188K
描述
GaAs Enhancement-Mode PHEMT 0.5 ? 6 GHz Low Noise Amplifier

MGA-665P8-TR2 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SOLCC8,.08,20Reach Compliance Code:unknown
风险等级:5.13Is Samacsys:N
特性阻抗:50 Ω构造:COMPONENT
增益:14.5 dB最大输入功率 (CW):13 dBm
安装特点:SURFACE MOUNT功能数量:1
端子数量:8最大工作频率:6000 MHz
最小工作频率:500 MHz最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装等效代码:SOLCC8,.08,20电源:3 V
射频/微波设备类型:WIDE BAND LOW POWER子类别:RF/Microwave Amplifiers
最大压摆率:23.8 mA表面贴装:YES
技术:GAASBase Number Matches:1

MGA-665P8-TR2 数据手册

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Agilent MGA-665P8  
GaAs Enhancement-Mode  
PHEMT 0.5 – 6 GHz Low Noise  
Amplifier  
Data Sheet  
Features  
• Active-low power-down function  
• Single +3 V supply operation  
• Low noise and high gain MMIC  
• Output 50 match  
Surface Mount, 2.0 x 2.0 x 0.75 mm 8-lead LPCC  
Description  
• Excellent isolation  
• Minimal match and external  
biasing components  
supply voltage is applied to both  
Agilent’s MGA-665P8 is an  
the output terminal and a  
economical, easy-to-use GaAs  
MMIC Low Noise Amplifier (LNA)  
with a unique active-low power-  
down function. The LNA has low  
noise figure and high gain  
achieved through the use of  
Agilent Technologies’ proprietary  
GaAs Enhancement-mode PHEMT  
process. It is housed in a  
miniature 2.0 x 2.0 x 0.75 mm  
8-pin Leadless-Plastic-Chip-  
Carrier (LPCC) package. The  
compact footprint and low profile  
coupled with low noise, high gain  
and high linearity makes the  
MGA-665P8 an ideal choice as an  
LNA for broadband general-  
purpose applications. Its excellent  
broadband isolation also makes it  
a good buffer amplifier.  
• Housed in miniature 2 x 2 x 0.75 mm  
LPCC package  
separate VD terminal. A simple  
external bias insertion circuit  
consisting of a shunt inductor and  
a series dc block capacitor is  
sufficient to apply power supply  
voltage to the output of the MGA-  
665P8. The MGA-665P8 provides  
typical device performance of  
1.45 dB noise figure, 16 dB gain  
and an OIP3 of +18.1 dBm at  
5.25 GHz, at a bias point of 3 V  
and 20.5 mA.  
• Pb-free & MSL-1 package  
Specifications  
• 0.5 to 6 GHz operation  
• At 3 V, 20.5 mA, 2.4 GHz:  
NF = 1.2 dB  
Gain = 18.4 dB  
OIP3 = 19 dBm  
• At 3 V, 20.5 mA, 5.25 GHz:  
NF = 1.45 dB  
Gain = 16 dB  
OIP3 = 18.1 dBm  
Pin Configuration, Top View  
GND PADDLE  
POWER DOWN FUNCITON:  
LOGIC LOW (0-1 V): POWER ON  
LOGIC HIGH (2-3 V): POWER OFF  
1: GND  
8: UNUSED  
NOTES:  
2: RF  
IN  
7: RF  
& V  
OUT D  
The output of the MGA-665P8  
provides a very good broadband  
match to 50 . Its input requires a  
simple external LC network to  
provide a low noise figure and  
good input return loss. Power  
1. PINS 1, 3, AND PADDLE NEED TO BE  
PROPERLY GROUNDED TO OBTAIN  
SPECIFIED PERFORMANCE.  
3: GND  
6: V  
D
2. SUPPLY VOLTAGE, V , NEEDS TO BE  
D
APPLIED AT PINS 6 & 7. SUPPLY AT  
PIN 7 TO BE APPLIED USING A BIAS  
TEE OR EQUIVALENT.  
4: UNUSED  
5: POWERDOWN  
Attention: Observe precautions for handling electrostatic sensitive devices.  
ESD Machine Model = 40 V  
ESD Human Body Model = 150 V  
Refer to Agilent Application Note A004R: Electrostatic Discharge, Damage and Control.  

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