Datasheet > MGA-65606

MGA-65606

更新时间： 2024-01-13 10:33:53

品牌	Logo	应用领域
安华高科 - AVAGO		放大器功率放大器
页数	文件大小	规格书
14页	439K
描述
Low Noise Amplifi er with switchable Bypass/Shutdown Mode in Low Profi le Package

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MGA-65606 数据手册

MGA-65606

Low Noise Ampliﬁer with switchable Bypass/Shutdown Mode

in Low Proﬁle Package

Data Sheet

Description

Features

Avago Technologies’ MGA-65606 is an economical, easy-  Low current consumption

to-use GaAs MMIC Low Noise Ampliﬁer (LNA) with Bypass/

Shutdown mode. The LNA has low noise and high linearity

achieved through the use of Avago Technologies’ propri-

 Adjustable bias current

 Simple matching network

etary 0.25 m GaAs Enhancement-mode pHEMT process.  Broadband operation (2.5 – 4) GHz

The Bypass/Shutdown mode enables the LNA to be

bypassed during high input signal power and reduce

 Low Noise Figure

 Low current consumption in Bypass Mode, <100 A

current consumption. It is housed in a low proﬁle 2.0 x 1.3

x 0.5 mm 6-pin Ultra Thin Package. The compact footprint  Fully matched to 50 ohm in Bypass Mode

and low proﬁle coupled with low noise, high linearity make

the MGA-65606 an ideal choice as a low noise ampliﬁer for

mobile and CPE receivers in the WiMAX and WLL (2.5 – 4)

 High Linearity (LNA and Bypass Mode)

 Low proﬁle package

GHz band.

Typical Performance

Component Image

3.5 GHz; 3V, 10mA (Typ):

2.0 x 1.3 x 0.5 mm 6-lead Ultra Thin Package

 15.3 dB Gain

 1.05 dB Noise Figure

Note:

Package marking provides

orientation and identiﬁcation

 +5.7 dBm Input IP3

65X

 -2.4 dBm Input Power at 1 dB gain compression

 4.2 dB Insertion Loss in Bypass Mode

 17 dBm IIP3 in Bypass Mode (Pin = -20 dBm)

 <100 A current consumption in Bypass mode

“65” = Product Code

“X” = Month Code

Pin Conﬁguration

Pin 1 (Vbias)

Pin 2 (RFin)

Pin 3 (Gnd)

Pin 6 (Vsd)

Pin 5 (RFOut)

Pin 4 (Vdd)

Applications

 Low noise ampliﬁer for WiMAX, Wireless Local Loop.

GND

 Other ultra low noise applications in the 2.5 – 4 GHz

band.

TOP VIEW

Simpliﬁed Schematic

Bias /

VBias

RF IN

VSD

Control

Attention: Observe precautions for

handling electrostatic sensitive devices.

ESD Machine Model = 50 V

ESD Human Body Model = 300 V

Refer to Avago Application Note A004R:

Electrostatic Discharge, Damage and Control.

RF OUT

LNA

Vdd

12 3 4 5 6 7...14

中文翻译

下载PDF

与MGA-65606相关器件

型号	品牌	获取价格	描述	数据表
MGA-65606-BLKG	AVAGO	获取价格	Low Noise Amplifi er with switchable Bypass/Shutdown Mode in Low Profi le Package
MGA-65606-TR1G	AVAGO	获取价格	Low Noise Amplifi er with switchable Bypass/Shutdown Mode in Low Profi le Package
MGA-65606-TR2G	AVAGO	获取价格	Low Noise Amplifi er with switchable Bypass/Shutdown Mode in Low Profi le Package
MGA-665P8	AGILENT	获取价格	GaAs Enhancement-Mode PHEMT 0.5 ? 6 GHz Low Noise Amplifier
MGA-665P8-BLK	AGILENT	获取价格	GaAs Enhancement-Mode PHEMT 0.5 ? 6 GHz Low Noise Amplifier
MGA-665P8-BLKG	AVAGO	获取价格	500MHz - 6000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, 2 X 2 MM, 0.75 MM HEIGHT, LEA
MGA-665P8-TR1	AGILENT	获取价格	GaAs Enhancement-Mode PHEMT 0.5 ? 6 GHz Low Noise Amplifier
MGA-665P8-TR2	AGILENT	获取价格	GaAs Enhancement-Mode PHEMT 0.5 ? 6 GHz Low Noise Amplifier
MGA-675T6-BLKG	AVAGO	获取价格	Low Noise Amplifi er with Shutdown Mode in Low Profi le Package for 4.9 - 6 GHz Applicatio
MGA-675T6-TR1G	AVAGO	获取价格	Low Noise Amplifi er with Shutdown Mode in Low Profi le Package for 4.9 - 6 GHz Applicatio

与MGA-65606相关文章

SL74HC10N：高性能三输入与非门解析
2024-09-03

43
AIC1781A 电池充电控制器深度解析
2024-09-03

31
Pickering新高压舌簧继电器亮相汽车测试博览会
2024-08-26

68
采用MCU+MPU双处理器架构实现的创新应用设计探索
2024-08-23

75

产品中心

服务支持

精选活动

关于我们

帮助中心

MGA-65606

MGA-65606 数据手册

与MGA-65606相关器件

与MGA-65606相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MGA-65606

MGA-65606 数据手册

与MGA-65606相关器件

与MGA-65606相关文章

您还可以找

您在本页遇到什么问题？