Datasheet > MGA-684P8

MGA-684P8

更新时间： 2024-01-30 23:29:29

品牌	Logo	应用领域
安华高科 - AVAGO		放大器功率放大器
页数	文件大小	规格书
10页	136K
描述
Low Noise Active Bias Low Noise Amplifi er

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MGA-684P8 数据手册

MGA-684P8

Low Noise Active Bias Low Noise Ampliﬁer

Data Sheet

Description

Features

Avago Technologies’ MGA-684P8 is an economical, easy-  Low noise Figure

to-use GaAs MMIC Low Noise Ampliﬁer (LNA). The LNA

has low noise and high linearity achieved through the

use of Avago Technologies’ proprietary 0.25 m GaAs

Enhancement-mode pHEMT process. It is housed in a

 High linearity performance

 GaAs E-pHEMT Technology

 Low cost small package size: 2.0 x 2.0 x 0.75 mm

 Excellent uniformity in product speciﬁcations

 Tape-and-Reel packaging option available

[1]

miniature 2.0 x 2.0 x 0.75 mm 8-pin Quad-Flat-Non-Lead

(QFN) package. It is designed for optimum use from 1.5

GHz up to 4 GHz. The compact footprint and low proﬁle

coupled with low noise, high gain and high linearity make

the MGA-684P8 an ideal choice as a low noise ampliﬁer for

cellular infrastructure for GSM and CDMA. For optimum

performance at lower frequency from 450 MHz up to 1.5

GHz, MGA-683P8 is recommended. Both MGA-683P8 and

MGA-684P8 share the same package and pinout conﬁgu-

ration.

Speciﬁcations

1.9 GHz; 5 V, 35 mA

 17.6 dB Gain

 0.56 dB Noise Figure

 21 dB Input Return Loss

 32.4 dBm Output IP3

 22 dBm Output Power at 1dB gain compression

Pin Conﬁguration and Package Marking

Applications

 Low noise ampliﬁer for cellular infrastructure for GSM

TDS-CDMA, and CDMA.

 Other low noise application.

2.0 x 2.0 x 0.75 mm 8-lead QFN

[1]

[8]

[7]

[8]

[7]

[1]

[2]

[3]

[4]

 Repeater, Metrocell/Picocell application.

84X

[6]

[5]

[3]

[4]

[6]

[5]

Simpliﬁed Schematic

Vdd

Top View

Bottom View

Rbias

Pin 1 – Vbias

Pin 5 – Not Used

Pin 6 – Not Used

Pin 7 – RFoutput/Vdd

Pin 8 – Not Used

Centre tab - Ground

Pin 2 – RFinput

Pin 3 – Not Used

Pin 4 – Not Used

Note:

Package marking provides orientation and identiﬁcation

“84”= Device Code, where X is the month code.

RFout

[1]

[8]

[7]

[6]

[5]

RFin

[2]

[3]

[4]

Attention: Observe precautions for

handling electrostatic sensitive devices.

ESD Machine Model = 70 V (Class A)

ESD Human Body Model = 500 V (Class 1B)

Refer to Avago Application Note A004R:

Electrostatic Discharge, Damage and Control.

Note:



The schematic is shown with the assumption that similar PCB is used

for both MGA-683P8 and MGA-684P8.



Detail of the components needed for this product is shown in Table 1.

Enhancement mode technology employs positive gate voltage,

thereby eliminating the need of negative gate voltage associated

with conventional depletion mode devices.



Good RF practice requires all unused pins to be earthed.

12 3 4 5 6 7...10

中文翻译

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与MGA-684P8相关器件

型号	品牌	获取价格	描述	数据表
MGA-684P8-BLKG	AVAGO	获取价格	Low Noise Active Bias Low Noise Amplifi er
MGA-684P8-TR1G	AVAGO	获取价格	Low Noise Active Bias Low Noise Amplifi er
MGA-68563-BLKG	AVAGO	获取价格	RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
MGA-68563-TR2G	AVAGO	获取价格	RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
MGA-685T6-TR1G	AVAGO	获取价格	100MHz - 1500MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, 2 X 1.30 MM, 0.40 MM HEIGHT,
MGA-6X563	AVAGO	获取价格	Current Adjustable Low Noise Amplifier in SOT-363 Package
MGA71543	AGILENT	获取价格	Low Noise Amplifier with Mitigated Bypass Switch
MGA-71543_04	AGILENT	获取价格	Low Noise Amplifier with Mitigated Bypass Switch
MGA-71543-BLK	AGILENT	获取价格	Low Noise Amplifier with Mitigated Bypass Switch
MGA-71543-BLKG	AGILENT	获取价格	Low Noise Amplifier with Mitigated Bypass Switch

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