MEA75-12DA

更新时间： 2024-11-19 22:30:15

品牌	Logo	应用领域
IXYS		整流二极管局域网快速恢复二极管
页数	文件大小	规格书
2页	95K
描述
Fast Recovery Epitaxial Diode (FRED) Module

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MEA75-12DA 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.75	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1.85 V	最大非重复峰值正向电流：	1300 A
最高工作温度：	150 °C	最大输出电流：	75 A
最大重复峰值反向电压：	1200 V	子类别：	Rectifier Diodes
Base Number Matches：	1

MEA75-12DA 数据手册

MEA 75-12 DA V_RRM= 1200 V

MEK 75-12 DA I_FAV= 75 A

Fast Recovery

Epitaxial Diode

(FRED) Module

MEE 75-12 DA t_rr

= 250 ns

Preliminary data

TO-240 AA

V_RSM

V_RRM

Type

MEA75-12 DA

MEK 75-12 DA

MEE 75-12 DA

1200

Symbol

Test Conditions

Maximum Ratings

Features

I_FRMS

°C

107

case

●

International standard package

with DCB ceramic base plate

Planar passivated chips

Short recovery time

I_FAV

°C; rectangular, d = 0.5

I_FRM

t_P^ca<^se10 µs; rep. rating, pulse width limited by T_VJM

TBD

●

I_FSM

T_VJ= 45°C; t = 10 ms (50 Hz), sine

1200

1300

t = 8.3 ms (60 Hz), sine

Low switching losses

T_VJ= 150°C; t = 10 ms (50 Hz), sine

1080

1170

7200

7100

5800

5700

Soft recovery behaviour

Isolation voltage 3600 V~

UL registered E 72873

t = 8.3 ms (60 Hz), sine

I²t

T_VJ= 45°C; t = 10 ms (50 Hz), sine

A²s

t = 8.3 ms (60 Hz), sine

A²s

Applications

T_VJ= 150°C; t = 10 ms (50 Hz), sine

●

A²s

Antiparallel diode for high frequency

t = 8.3 ms (60 Hz), sine

switching devices

T_VJ

-40...+150

-40...+125

110

°C

●

Free wheeling diode in converters

T_stg

and motor control circuits

T_Hmax

●

Inductive heating and melting

P_tot

V_ISOL

T_case= 25°C

280

●

Uninterruptible power supplies (UPS)

50/60 Hz, RMS t = 1 min

3000

3600

●

Ultrasonic cleaners and welders

I_ISOL≤ 1 mA

t = 1 s

Advantages

M_d

Mounting torque (M5)

2.50-4/22-35 Nm/lb.in.

●

Terminal connection torque (M5)

High reliability circuit operation

●

Low voltage peaks for reduced

d_S

d_A

Creep distance on surface

Strike distance through air

Maximum allowable acceleration

12.7

9.6

m/s²

protection circuits

●

Low noise switching

●

Low losses

Weight

Symbol

Test Conditions

Characteristic Values (per diode)

typ. max.

Dimensions in mm (1 mm = 0.0394")

I_R

T_VJ= 25°C

V_R= V_RRM

V_R= 0.8 • V_RRM

0.5

T_VJ=125°C V_R= 0.8 • V_RRM

V_F

I_F= 100A; T_VJ= 125°C

T_VJ= 25°C

1.85

2.17

2.58

2.64

I_F= 300A; T_VJ= 125°C

T_VJ= 25°C

V_T0

r_T

For power-loss calculations only

1.48

3.65

mΩ

R_thJH

DC current

K/W

0.550

0.450

R_thJC

t_rr

I_F

T_VJ= 100°C

T_VJ25°C

T_VJ= 100°C

150

600

250

300

I_RM

V_R=

-di/dt=

A/µs

200

Data according to IEC 60747

IXYS reserves the right to change limits, test conditions and dimensions

D6 - 5

中文翻译

下载PDF

与MEA75-12DA相关器件

型号	品牌	获取价格	描述	数据表
MEA95-06DA	IXYS	获取价格	Fast Recovery Epitaxial Diode (FRED) Module
MEA95-06DA	LITTELFUSE	获取价格	Rectifier Diode, 1 Phase, 2 Element, 95A, 600V V(RRM), Silicon, TO-240AA, MODULE-3
MEA-E30PS/HP1-KL0,3S8	ALTECH	获取价格	Hall Effect Sensor, Rectangular,
MEA-E30PS/HP2-KL0,3S8	ALTECH	获取价格	Hall Effect Sensor,
Measuring	PANASONIC	获取价格	ZNR Transient/Surge Absorbers
MEB00806	POWEREX	获取价格	Three-Phase Diode Bridge Module (60 Amperes/800 Volts)
MEB1-128PBR	ITT	获取价格	Micro Edgeboard - .050 Contact Spacing
MEB1-128PH	ITT	获取价格	Micro Edgeboard - .050 Contact Spacing
MEB1-128PL	ITT	获取价格	Micro Edgeboard - .050 Contact Spacing
MEB1-128PL81	ITT	获取价格	Board Connector, 128 Contact(s), 2 Row(s), Male, 0.05 inch Pitch, Crimp Terminal, Locking,

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