Datasheet > MDV10N1K1URH

MDV10N1K1URH

更新时间： 2024-12-02 01:19:31

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
5页	948K
描述
Single N-channel Trench MOSFET 100V, 12.3A, 110m(ohm)

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MDV10N1K1URH 数据手册

MDV10N1K1

Single N-channel Trench MOSFET 100V, 12.3A, 110mΩ

ㄹ

General Description

Features

The MDV10N1K1 uses advanced MagnaChip’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality. MDV10N1K1 is suitable device for DC to DC

converter, Load Switch and general purpose applications.



V_DS= 100V

I_D= 12.3A @V_GS= 10V

R_{DS(ON) (MAX)}

< 110mΩ @V_GS= 10V

< 116mΩ @V_GS= 6.0V



100% UIL Tested

PDFN33

Absolute Maximum Ratings (Tc = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

V_DSS

Rating

100

Unit

Gate-Source Voltage

V_GSS

±20

T_C=25^oC

T_C=70^oC

12.3

9.9

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current ⁽²⁾

Power Dissipation

I_D

I_DM

P_D

T_C=25^oC

T_C=70^oC

36.8

23.5

Single Pulse Avalanche Energy ⁽³⁾

E_AS

^oC

Junction and Storage Temperature Range

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient ⁽¹⁾

Thermal Resistance, Junction-to-Case

Symbol

R_θJA

Rating

Unit

^oC/W

R_θJC

3.4

Sep. 2016. Version 1.1

MagnaChip Semiconductor Ltd.

12 3 4 5

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