Datasheet > MDU3601

MDU3601

更新时间： 2024-11-24 01:19:31

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	1021K
描述
Single P-Channel Trench MOSFET, -30V, -85A, 2.9m(ohm)

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MDU3601 数据手册

MDU3601

Single P-Channel Trench MOSFET, -30V, -85A, 2.9mΩ

General Description

Features



V_DS= -30V

The MDU3601 uses advanced MagnaChip’s MOSFET Technology

to provide low on-state resistance.

I_D= -85A @V_GS= -10V

R_DS(ON)

< 2.9mΩ

@V_GS= -10V

This device is suited for Power Management and load switching

applications common in Notebook Computers and Portable

Battery Packs.

< 4.3mΩ

100% UIL Tested

100% Rg Tested

@V_GS= -4.5V



Applications



Load Switch

General purpose applications

Smart Module for Note PC Battery

Absolute Maximum Ratings (T_J=25^oC unless otherwise noted)

Characteristics

Symbol

V_DSS

Rating

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GSS

±20

-128

-85

Tc = 25℃ (Silicon Limited)

Tc = 25℃ (Package Limited)

Tc = 100℃

Continuous Drain Current ⁽¹⁾

I_D

-81

-30

T_A= 25℃

-19

T_A= 100℃

Pulsed Drain Current ⁽²⁾

Power Dissipation

I_DM

P_D

-340

Tc = 25℃

Tc = 100℃

Single Pulse Avalanche Energy ⁽³⁾

E_AS

364

^oC

Junction and Storage Temperature Range

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Symbol

R_θJA

Rating

22.7

Unit

Thermal Resistance, Junction-to-Ambient ⁽¹⁾

^oC/W

Thermal Resistance, Junction-to-Case

R_θJC

1.3

Jan. 2017 Version 1.0

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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