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MDIS4N65BTH PDF预览

MDIS4N65BTH

更新时间: 2024-11-22 17:15:55
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美格纳 - MGCHIP /
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6页 1059K
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MDIS4N65BTH 数据手册

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MDIS4N65B  
N-Channel MOSFET 650V, 3.65A, 2.2  
General Description  
Features  
These N-channel MOSFET are produced using advanced  
Magnachip’s MOSFET Technology, which provides low on-  
state resistance, high switching performance and excellent  
quality.  
VDS = 650V  
ID = 3.65A  
RDS(ON) 2.2Ω  
@ VGS = 10V  
@ VGS = 10V  
Applications  
These devices are suitable device for SMPS, high Speed  
switching and general purpose applications.  
Power Supply  
PFC  
High Current, High Speed Switching  
G
TO-251-VS  
(IPAK- VS)  
S
Absolute Maximum Ratings (Ta = 25oC)  
Characteristics  
Symbol  
Rating  
650  
Unit  
V
Drain-Source Voltage  
VDSS  
VGSS  
Gate-Source Voltage  
±30  
V
TC=25oC  
3.65  
2.3  
A
Continuous Drain Current  
Pulsed Drain Current(1)  
Power Dissipation  
ID  
TC=100oC  
A
IDM  
PD  
14.6  
68.3  
0.54  
6.83  
4.5  
A
TC=25oC  
W
W/ oC  
Derate above 25 oC  
Repetitive Avalanche Energy(1)  
EAR  
dv/dt  
EAS  
mJ  
V/ns  
mJ  
Peak Diode Recovery dv/dt(3)  
Single Pulse Avalanche Energy(4)  
170  
Junction and Storage Temperature Range  
TJ, Tstg  
-55~150  
oC  
Thermal Characteristics  
Characteristics  
Symbol  
RθJA  
MDIS4N65B  
Unit  
Thermal Resistance, Junction-to-Ambient(1)  
Thermal Resistance, Junction-to-Case(1)  
110  
oC/W  
RθJC  
1.83  
1
Jan. 2021. Version 1.1  
Magnachip Semiconductor td.  

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