Datasheet > MDI6N65BTH

MDI6N65BTH

更新时间： 2024-11-19 01:16:39

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	935K
描述
N-Channel MOSFET 650V, 5.7A, 1.45(ohm)

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MDI6N65BTH 数据手册

MDI6N65B

N-Channel MOSFET 650V, 5.7A, 1.45Ω

General Description

Features

The MDI6N65B use advanced Magnachip’s

MOSFET Technology, which provides low on-state

resistance, high switching performance and

excellent quality.

 V_DS= 650V

 I_D= 5.7A

 R_DS(ON)≤ 1.45Ω

@V_GS= 10V

MDI6N65B is suitable device for SMPS, HID and

general purpose applications.

Applications

 Power Supply

 PFC

 Ballast

TO-251-SS

(IPAK-SS)

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

Rating

650

Unit

V_DSS

V_GSS

Gate-Source Voltage

±30

T_C=25^oC

T_C=100^oC

5.7

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

Power Dissipation

I_D

3.6

I_DM

P_D

22.8

119

T_C=25^oC

Derate above 25 ^oC

0.95

4.5

W/ ^oC

V/ns

Peak Diode Recovery dv/dt⁽³⁾

Repetitive Pulse Avalanche Energy⁽⁴⁾

Avalanche current⁽¹⁾

dv/dt

E_AR

11.9

5.7

Iar

Single Pulse Avalanche Energy⁽⁴⁾

E_AS

200

^oC

Junction and Storage Temperature Range

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient⁽¹⁾

Thermal Resistance, Junction-to-Case⁽¹⁾

Symbol

R_θJA

Rating

110

Unit

^oC/W

R_θJC

1.05

Jul. 2014. Ver. 1.2

MagnaChip Semiconductor Ltd.

12 3 4 5 6

中文翻译

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