Datasheet > MDE1991

MDE1991

更新时间： 2024-11-26 01:16:39

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	1008K
描述
Single N-channel Trench MOSFET 100V, 120A, 4.4m(ohm)

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MDE1991 数据手册

MDE1991

Single N-channel Trench MOSFET 100V, 120A, 4.4mΩ

Features

General Description

The MDE1991 uses advanced MagnaChip’s MV MOSFET

Technology, which provides high performance in on-state resistance,

fast switching performance, and excellent quality.



V_DS= 100V

I_D= 120A @V_GS= 10V

R_DS(ON)

< 4.4 mΩ @V_GS= 10V

100% UIL Tested



These devices can also be utilized in industrial applications

such as Low Power Drives of E-bike (E-Vehicles), DC/DC converter,

and general purpose applications.

TO-263

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

Rating

100

Unit

V_DSS

V_GSS

Gate-Source Voltage

±20

T_C=25^oC (Silicon Limited)

159

Continuous Drain Current ⁽¹⁾

T_C=25^oC (Package Limited)

T_C=100^oC

I_D

120

100

Pulsed Drain Current

I_DM

P_D

480

T_C=25^oC

223

Power Dissipation

T_C=100^oC

Single Pulse Avalanche Energy ⁽²⁾

E_AS

609

^oC

Junction and Storage Temperature Range

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient ⁽¹⁾

Thermal Resistance, Junction-to-Case

Symbol

R_θJA

Rating

62.5

Unit

^oC/W

R_θJC

0.56

Jan. 2016 Ver.0.0

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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