Datasheet > MDE10N026RH

MDE10N026RH

更新时间： 2024-11-26 17:15:55

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	1069K
描述
PackageD2PAK

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MDE10N026RH 数据手册

MDE10N026RH

Single N-channel Trench MOSFET 100V, 120A, 2.6mΩ

General Description

Features

The MDE10N026RH uses advanced Magnachip’s MOSFET

Technology, which provides high performance in on-state resistance,

fast switching performance, and excellent quality.



V_DS= 100V

I_D= 120A @V_GS= 10V

Very low on-resistance R_DS(ON)

< 2.6 mΩ @V_GS= 10V

100% UIL Tested

These devices can also be utilized in industrial applications

such as Low Power Drives of E-bike (E-Vehicles), DC/DC converter,

and general purpose applications.



100% Rg Tested

TO-263

Absolute Maximum Ratings (T_J= 25 ^oC)

Characteristics

Drain-Source Voltage

Symbol

Rating

100

Unit

V_DSS

V_GSS

Gate-Source Voltage

±20

T_C=25^oC (Silicon Limited)

283

Continuous Drain Current ⁽¹⁾

I_D

T_C=25^oC (Package Limited)

T_C=100^oC (Silicon Limited)

120

200

Pulsed Drain Current ⁽²⁾

Power Dissipation

I_DM

480

T_C=25^oC

416

P_D

T_C=100^oC

208

Single Pulse Avalanche Energy ⁽³⁾

E_AS

512

^oC

Junction and Storage Temperature Range

T_J, T_stg

-55~175

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Symbol

R_θJA

Rating

Unit

^oC/W

R_θJC

0.36

Jun. 2021. Version 1.4

Magnachip Semiconductor Ltd.

12 3 4 5 6

中文翻译

下载PDF

与MDE10N026RH相关器件

型号	品牌	获取价格	描述	数据表
MDE10N050RH	MGCHIP	获取价格	PackageD2PAK
MDE-14D101	ETC	获取价格	METAL OXIDE VARISTORS
MDE-14D101K	MDE	获取价格	Metal Oxide Varistors
MDE-14D102K	MDE	获取价格	Metal Oxide Varistors
MDE-14D112K	MDE	获取价格	Metal Oxide Varistors
MDE-14D121K	MDE	获取价格	Metal Oxide Varistors
MDE-14D151K	MDE	获取价格	Metal Oxide Varistors
MDE-14D180M	MDE	获取价格	Metal Oxide Varistors
MDE-14D181K	MDE	获取价格	Metal Oxide Varistors
MDE-14D182K	MDE	获取价格	Metal Oxide Varistors