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MDC5001T1 PDF预览

MDC5001T1

更新时间: 2024-11-30 22:30:19
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 电信集成电路电信电路光电二极管
页数 文件大小 规格书
10页 192K
描述
SILICON SMALLBLOCK INTEGRATED CIRCUIT

MDC5001T1 技术参数

生命周期:Transferred零件包装代码:SOT-363
包装说明:TSSOP,针数:6
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.22Is Samacsys:N
JESD-30 代码:R-PDSO-G6JESD-609代码:e0
长度:2 mm功能数量:1
端子数量:6最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH认证状态:Not Qualified
座面最大高度:1.1 mm标称供电电压:2.75 V
表面贴装:YES电信集成电路类型:TELECOM CIRCUIT
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL宽度:1.25 mm
Base Number Matches:1

MDC5001T1 数据手册

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Order this document  
by MDC5001T1/D  
SEMICONDUCTOR TECHNICAL DATA  
Maintains Stable Bias Current in N–Type Discrete Bipolar Junction and Field  
Effect Transistors  
SILICON  
SMALLBLOCK  
INTEGRATED CIRCUIT  
Provides Stable Bias Using a Single Component Without Use of Emitter Ballast  
and Bypass Components  
Operates Over a Wide Range of Supply Voltages Down to 1.8 Vdc  
Reduces Bias Current Variation Due to Temperature and Unit–to–Unit Parametric  
Changes  
6
5
Consumes  
0.5 mW at V = 2.75 V  
CC  
4
Active High Enable is CMOS Compatible  
1
2
3
This device provides a reference voltage and acts as a DC feedback element  
around an external discrete, NPN BJT or N–Channel FET. It allows the external  
transistor to have its emitter/source directly grounded and still operate with a stable  
collector/drain DC current. It is primarily intended to stabilize the bias of discrete RF  
stages operating from a low voltage regulated supply, but can also be used to stabilize  
the bias current of any linear stage in order to eliminate emitter/source bypassing and  
achieve tighter bias regulation over temperature and unit variations. The “ENABLE”  
polarity nulls internal current, Enable current, and RF transistor current in “STANDBY.”  
This device is intended to replace a circuit of three to six discrete components.  
The combination of low supply voltage, low quiescent current drain, and small  
package make the MDC5001T1 ideal for portable communications applications such  
as:  
CASE 419B–01, Style 19  
SOT–363  
INTERNAL CIRCUIT DIAGRAM  
V
(4)  
CC  
R1  
R2  
Cellular Telephones  
Q1  
Pagers  
PCN/PCS Portables  
GPS Receivers  
V
(6)  
(1)  
ref  
R3  
R4  
PCMCIA RF Modems  
Q2  
Cordless Phones  
I
out  
V
ENBL  
(5)  
Broadband and Multiband Transceivers and Other Portable Wireless Products  
R5  
R6  
MAXIMUM RATINGS  
Q4  
Rating  
Symbol  
Value  
15  
Unit  
Vdc  
°C  
°C  
°C  
V
Power Supply Voltage  
V
CC  
Ambient Operating Temperature Range  
Storage Temperature Range  
Junction Temperature  
T
A
–40 to +85  
–65 to +150  
150  
T
stg  
GND (2) and (3)  
T
J
Collector Emitter Voltage (Q2)  
Enable Voltage (Pin 5)  
V
CEO  
–15  
V
ENBL  
V
CC  
V
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Power Dissipation  
(FR–5 PCB of 1″ × 0.75″ × 0.062, T = 25°C)  
Derate above 25°C  
P
mW  
D
150  
1.2  
A
mW/°C  
°C/W  
Thermal Resistance, Junction to Ambient  
SMALLBLOCK is a trademark of Motorola, Inc.  
R
833  
θJA  
REV 1  
Motorola, Inc. 1997  

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