MCR703APBFREE

更新时间： 2024-01-24 23:58:05

品牌	Logo	应用领域
CENTRAL		触发装置可控硅整流器
页数	文件大小	规格书
2页	470K
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数据手册

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MCR703APBFREE 数据手册

MCR703A MCR704A

MCR706A MCR708A

www.centralsemi.com

SURFACE MOUNT

SILICON CONTROLLED RECTIFIER

4 AMP, 100 THRU 600 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR MCR703A,

MCR704A, MCR706A, and MCR708A are epoxy

molded Silicon Controlled Rectifiers designed for

sensing circuit applications and control systems.

MARKING: FULL PART NUMBER

DPAK THYRISTOR CASE

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

MCR703A MCR704A

100 200

MCR706A MCR708A UNITS

Peak Repetitive Off-State Voltage

400

600

DRM, RRM

RMS On-State Current (T =85°C)

4.0

T(RMS)

Peak non-Repetitive Surge Current

(1/2 cycle Sine wave, 50Hz/60Hz)

1.1

0.5

0.1

0.2

A²s

TSM

I²t

I²t Value for Fusing, t=10ms

Peak Gate Power, tp=1.0μs

Average Gate Power Dissipation

Peak Gate Current, tp=1.0μs

Critical Rate of Rise of On-State Current

Storage Temperature

G(AV)

di/dt

A/μs

°C

-40 to +150

-40 to +125

stg

Junction Temperature

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Rated V V R =1.0KΩ

DRM, RRM, GK

μA

DRM, RRM

Rated V

=1.0KΩ, T =125°C

200

DRM, RRM

DRM, RRM, GK

V =12V, R =10Ω

I =50mA, R =1.0KΩ

0.25

0.55

1.6

2.0

0.8

1.8

V =12V, R =10Ω

=8.0A, tp=380μs

dv/dt

V = / V

=1.0KΩ, T =125°C

V/μs

DRM, GK

R1 (1-March 2010)

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