Datasheet > MCR649AP-3

MCR649AP-3

更新时间： 2024-09-29 01:10:15

品牌	Logo	应用领域
DIGITRON		/
页数	文件大小	规格书
3页	813K
描述
SILICON CONTROLLED RECTIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MCR649AP-3 数据手册

D I G I T R O N S E M I C O N D U C T O R S

MCR649AP SERIES

SILICON CONTROLLED RECTIFIER

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

(1)

Peak repetitive forward and reverse blocking voltage

MCR649AP-1

MCR649AP-2

MCR649AP-3

MCR649AP-4

MCR649AP-6

MCR649AP-8

MCR649AP-9

MCR649AP-10

100

200

400

600

700

800

V_DRMor V_RRM

Volts

On-state current

I_T(RMS)

I²t

Amps

A²s

Circuit fusing (8.3ms)

235

Peak surge current

I_TSM

235

Amps

(Half cycle, 60Hz, T_J= -65° to +125°C)

Peak gate power – forward

Average gate power – forward

Peak gate current – forward

P_GM

P_G(AVG)

I_GM

0.5

Watts

Amps

Peak gate voltage

Forward

V_GFM

V_GRM

Volts

Reverse

Operating junction temperature range

Storage temperature range

T_J

-65 to +125

-65 to +150

1.5

°C

T_stg

Thermal resistance, junction to case

R_ӨJC

°C/W

Note 1: V_DRMand V_RRMfor all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage.

ELECTRICAL CHARACTERISTICS (T_C= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Peak forward or reverse blocking current

(Rated V_DRMor V_RRM, gate open)

T_J= 25°C

I_DRM, I_RRM

µA

0.6

T_J= 125°

Gate trigger current (continuous dc)

I_GT

(V_D= 7V, R_L= 100Ω)

Gate trigger voltage (continuous dc)

(V_D= 7V, R_L= 100Ω)

V_GT

0.7

3.5

Volts

(V_D= rated V_DRM, R_L= 100Ω, T_J= 125°C)

0.3

Forward on voltage

V_TM

Volts

µs

(I_TM= 20A)

1.1

1.4

Holding current

I_H

(V_D= 7V, gate open)

Turn-on time (t_d+ t_r)

t_gt

(I_GT= 50mA, I_T= 10A, V_D= rated V_DRM

)

Turn-off time

I_T= 10A, I_R= 10A, dv/dt = 20V/µs, T_J= 125°C)

(V_D= rated voltage V_DRM

t_q

µs

)

Forward voltage application rate

(exponential)

dv/dt

V/µs

(Gate open, T_J= 125°C, V_D= rated V_DRM

)

phone +1.908.245-7200

fax +1.908.245-0555

sales@digitroncorp.com

www.digitroncorp.com

144 Market Street

Kenilworth NJ 07033 USA

Rev. 20130116

12 3

中文翻译

下载PDF

与MCR649AP-3相关器件

型号	品牌	获取价格	描述	数据表
MCR649AP4	MOTOROLA	获取价格	SILICON CONTROLLED RECTIFIERS
MCR649AP-4	DIGITRON	获取价格	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 200; Max TMS Bridge Inp
MCR649AP6	MOTOROLA	获取价格	SILICON CONTROLLED RECTIFIERS
MCR649AP-6	DIGITRON	获取价格	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 400; Max TMS Bridge Inp
MCR649AP8	MOTOROLA	获取价格	SILICON CONTROLLED RECTIFIERS
MCR649AP-8	DIGITRON	获取价格	SILICON CONTROLLED RECTIFIER
MCR649AP9	MOTOROLA	获取价格	SILICON CONTROLLED RECTIFIERS
MCR649AP-9	DIGITRON	获取价格	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 700; Max TMS Bridge Inp
MCR64-9HR	DIGITRON	获取价格	Silicon Controlled Rectifier
MCR649P-1	NJSEMI	获取价格	Thyristor SCR 50V 100A 3-Pin(3+Tab) TO-220AB Box