Datasheet > MCR649AP-9

MCR649AP-9

更新时间： 2024-02-23 15:59:24

品牌	Logo	应用领域
DIGITRON		/
页数	文件大小	规格书
4页	1155K
描述
Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 700; Max TMS Bridge Input Voltage: 12.7; Max DC Reverse Voltage: 5; Capacitance: 10; Package: TO-3

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技术参数
数据手册

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MCR649AP-9 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.91
JESD-609代码：	e0	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	Tin/Lead (Sn/Pb)	处于峰值回流温度下的最长时间：	NOT SPECIFIED
触发设备类型：	SCR

MCR649AP-9 数据手册

MCR649AP SERIES

SILICON CONTROLLED RECTIFIERS

High-reliability discrete products

and engineering services since 1977

FEATURES

•

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS.

Rating

Symbol

Value

Unit

(1)

Peak repetitive forward and reverse blocking voltage

MCR649AP-1

MCR649AP-2

MCR649AP-3

MCR649AP-4

MCR649AP-6

MCR649AP-8

MCR649AP-9

MCR649AP-10

100

200

400

600

700

800

V_DRMor V_RRM

Volts

On-state current

I_T(RMS)

I²t

Amps

A²s

Circuit fusing (8.3ms)

235

Peak surge current

(Half cycle, 60Hz, T_J= -65° to +125°C)

I_TSM

235

Amps

Peak gate power – forward

Average gate power – forward

Peak gate current – forward

P_GM

P_G(AVG)

I_GM

0.5

Watts

Amps

Peak gate voltage

Forward

Reverse

V_GFM

V_GRM

Volts

Operating junction temperature range

Storage temperature range

T_J

-65 to +125

-65 to +150

1.5

°C

T_stg

R_ӨJC

Thermal resistance, junction to case

°C/W

Note 1: V_DRMand V_RRMfor all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage.

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Min

Typ

Max

Unit

Peak forward or reverse blocking current

(Rated V_DRMor V_RRM, gate open)

T_J= 25°C

I_DRM, I_RRM

µA

0.6

T_J= 125°

Gate trigger current (continuous dc)

(V_D= 7V, R_L= 100Ω)

I_GT

Gate trigger voltage (continuous dc)

(V_D= 7V, R_L= 100Ω)

(V_D= rated V_DRM, R_L= 100Ω, T_J= 125°C)

V_GT

0.7

3.5

Volts

0.3

Forward on voltage

(I_TM= 20A)

V_TM

Volts

1.1

1.4

Holding current

(V_D= 7V, gate open)

I_H

Rev. 20171114

12 3 4

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