D I G I T R O N S E M I C O N D U C T O R S
MCR65 SERIES
SILICON CONTROLLED RECTIFIER
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse voltage(1)
(TJ = 25 to +125°C, gate open)
MCR65-1
25
MCR65-2
50
MCR65-3
100
200
300
400
500
600
700
800
MCR65-4
V
RRM, VDRM
Volts
MCR65-5
MCR65-6
MCR65-7
MCR65-8
MCR65-9
MCR65-10
Non-repetitive peak reverse blocking voltage
(t ≤ 5ms)(1)
MCR65-1
MCR65-2
MCR65-3
MCR65-4
MCR65-5
MCR65-6
MCR65-7
MCR65-8
MCR65-9
MCR65-10
35
75
150
300
400
500
600
700
800
900
VRSM
Volts
Forward current RMS
IT(RMS)
ITSM
55
Amps
Amps
Peak surge current
(one cycle, 60Hz, TC = -40 to +125°C)
550
Circuit fusing considerations
I2t
A2s
(t = 8.3ms)
1255
20
Peak gate power
PGM
PG(AV)
IGM
Watts
Watts
Amps
Average gate power (Pulse width ≤ 2µs)
Peak forward gate current
0.5
2
Forward peak gate voltage
Reverse peak gate voltage
VGFM
VGRM
10
Volts
Operating junction temperature range
Storage temperature range
Mounting torque
TJ
-40 to +125
-40 to +150
30
°C
°C
Tstg
In. lb.
Note 1: VDRM and VRRM for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices shall not have a
positive bias applied to the gate concurrently with a negative potential on the anode.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Maximum
Unit
Thermal resistance, junction to case
RӨJC
°C/W
Isolated stud
1.1
phone +1.908.245-7200
fax +1.908.245-0555
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144 Market Street
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Rev. 20130128