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MCR649AP-1 PDF预览

MCR649AP-1

更新时间: 2024-01-12 05:42:39
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DIGITRON /
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MCR649AP-1 数据手册

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MCR649AP SERIES  
SILICON CONTROLLED RECTIFIERS  
High-reliability discrete products  
and engineering services since 1977  
FEATURES  
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.  
MAXIMUM RATINGS.  
Rating  
Symbol  
Value  
Unit  
(1)  
Peak repetitive forward and reverse blocking voltage  
MCR649AP-1  
MCR649AP-2  
MCR649AP-3  
MCR649AP-4  
MCR649AP-6  
MCR649AP-8  
MCR649AP-9  
MCR649AP-10  
25  
50  
100  
200  
400  
600  
700  
800  
VDRM or VRRM  
Volts  
On-state current  
IT(RMS)  
I2t  
20  
Amps  
A2s  
Circuit fusing (8.3ms)  
235  
Peak surge current  
(Half cycle, 60Hz, TJ = -65° to +125°C)  
ITSM  
235  
Amps  
Peak gate power forward  
Average gate power forward  
Peak gate current forward  
PGM  
PG(AVG)  
IGM  
5
0.5  
2
Watts  
Watts  
Amps  
Peak gate voltage  
Forward  
Reverse  
VGFM  
VGRM  
10  
5
Volts  
Operating junction temperature range  
Storage temperature range  
TJ  
-65 to +125  
-65 to +150  
1.5  
°C  
°C  
Tstg  
RӨJC  
Thermal resistance, junction to case  
°C/W  
Note 1: VDRM and VRRM for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage.  
ELECTRICAL CHARACTERISTICS  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Peak forward or reverse blocking current  
(Rated VDRM or VRRM, gate open)  
TJ = 25°C  
IDRM, IRRM  
-
-
-
10  
5
µA  
0.6  
TJ = 125°  
mA  
Gate trigger current (continuous dc)  
(VD = 7V, RL = 100Ω)  
IGT  
mA  
-
-
40  
Gate trigger voltage (continuous dc)  
(VD = 7V, RL = 100Ω)  
(VD = rated VDRM, RL = 100Ω, TJ = 125°C)  
VGT  
-
0.7  
-
3.5  
-
Volts  
0.3  
Forward on voltage  
(ITM = 20A)  
VTM  
Volts  
mA  
-
-
1.1  
10  
1.4  
-
Holding current  
(VD = 7V, gate open)  
IH  
Rev. 20171114  

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