Datasheet > MCR63-3

MCR63-3

更新时间： 2024-01-18 19:55:00

品牌	Logo	应用领域
DIGITRON		/
页数	文件大小	规格书
3页	428K
描述
Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 100; Max TMS Bridge Input Voltage: 35; Max DC Reverse Voltage: 2; Capacitance: 60; Package: DIGI-PF1

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技术参数
数据手册

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MCR63-3 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.65	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	触发设备类型：	SCR
Base Number Matches：	1

MCR63-3 数据手册

MCR63 SERIES

SILICON CONTROLLED RECTIFIERS

High-reliability discrete products

and engineering services since 1977

FEATURES



Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak repetitive forward and reverse blocking voltage⁽¹⁾

(T_J= 25 to +125°C, gate open)

MCR63-1

MCR63-2

MCR63-3

100

200

300

400

500

600

700

800

MCR63-4

V_RRM, V_DRM

Volts

MCR63-5

MCR63-6

MCR63-7

MCR63-8

MCR63-9

MCR63-10

Non-repetitive peak reverse blocking voltage

≤ 5ms)⁽¹⁾

MCR63-1

MCR63-2

MCR63-3

MCR63-4

MCR63-5

MCR63-6

MCR63-7

MCR63-8

MCR63-9

MCR63-10

150

300

400

500

600

700

800

900

V_RSM

Volts

Forward current RMS

I_T(RMS)

I_TSM

Amps

Peak surge current

(one cycle, 60Hz, T_C= -40 to +125°C)

550

Circuit fusing considerations

I²t

A²s

(t = 8.3ms)

1255

Peak gate power

P_GM

P_G(AV)

I_GM

Watts

Amps

≤ 2µs)

Average gate power (Pulse width

0.5

Peak forward gate current

Forward peak gate voltage

Reverse peak gate voltage

V_GFM

V_GRM

Volts

Operating junction temperature range

Storage temperature range

Mounting torque

T_J

-40 to +125

-40 to +150

°C

T_stg

In. lb.

Note 1: V_DRMand V_RRMfor all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied

to the gate concurrently with a negative potential on the anode.

Rev. 20130128

12 3

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与MCR63-3相关器件

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MCR63-3A	NJSEMI	获取价格	Silicon Controlled Rectifiers
MCR63-4	NJSEMI	获取价格	Silicon Controlled Rectifiers
MCR63-4	DIGITRON	获取价格	SILICON CONTROLLED RECTIFIER
MCR63-4A	NJSEMI	获取价格	Silicon Controlled Rectifiers
MCR63-5	DIGITRON	获取价格	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 300; Max TMS Bridge Inp
MCR63-5	NJSEMI	获取价格	Silicon Controlled Rectifier
MCR63-6	DIGITRON	获取价格	SILICON CONTROLLED RECTIFIER
MCR63-6	NJSEMI	获取价格	Silicon Controlled Rectifiers
MCR63-6A	NJSEMI	获取价格	Silicon Controlled Rectifiers
MCR63-7	DIGITRON	获取价格	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 500; Max TMS Bridge Inp