5秒后页面跳转
MCR100-6-AP PDF预览

MCR100-6-AP

更新时间: 2024-01-23 23:30:15
品牌 Logo 应用领域
美微科 - MCC 栅极
页数 文件大小 规格书
3页 411K
描述
Rectifier Diode,

MCR100-6-AP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.53
配置:SINGLE最大直流栅极触发电流:0.08 mA
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260最大均方根通态电流:0.8 A
断态重复峰值电压:400 V重复峰值反向电压:400 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:10
触发设备类型:SCRBase Number Matches:1

MCR100-6-AP 数据手册

 浏览型号MCR100-6-AP的Datasheet PDF文件第2页浏览型号MCR100-6-AP的Datasheet PDF文件第3页 
M C C  
R
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
MCR100-6  
MCR100-8  
Features  
0.8 Ampere  
Silicon Controlled  
Rectifiers  
Blocking Voltage to 400V (MCR100-6)  
RMS on-state current to 0.8A  
General purpose switching  
xꢀ Epoxy meets UL 94 V-0 flammability rating  
·
·
Moisure Sensitivity Level 1  
Halogen free available upon request by adding suffix "-HF"  
400 thru 600 Volts  
Symbol  
VRRM  
VDRM  
Rating  
Rating  
Unit  
V
Peak Repetitive Forward and Reverse  
TO-92  
Blocking Voltage*  
MCR100-6  
MCR100-8  
400  
600  
A
E
IT(RMS  
Forward Current RMS  
0.8  
A
TJ  
Operating Junction Temperature  
Storage Temperature  
-40 to +125  
-55 to +150  
TSTG  
B
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
Test Conditions  
Symbol  
Min  
---  
Max  
10  
Unit  
Peak Forward or Reverse Blocking Current  
(VAK=Rated VDRM or VRRM;  
IDRM  
IRRM  
µA  
C
Forward “On” Voltage*  
(ITM=1A )  
VTM  
VGT  
---  
1.7  
0.8  
V
V
Gate Trigger Voltage  
(VAK=7V)  
---  
Holding Current  
(VAK =7V, IHL=20mA)  
IH  
mA  
uA  
---  
5.0  
80  
D
Gate Trigger Current  
(VAK=7V)  
IGT  
30  
K
* Forward current applied for 1ms maximum duration, duty Cycle 1%  
K
G
G
A
A
STRAIGHT LEAD BENT LEAD  
BULK PACK AMMO PACK  
G
DIMENSIONS  
INCHES  
MM  
DIM  
A
B
C
D
MIN  
.175  
.175  
.500  
.016  
.135  
.095  
.173  
MAX  
.185  
.185  
---  
.020  
.145  
.105  
.220  
MIN  
4.45  
4.45  
12.70  
0.41  
3.43  
2.42  
4.40  
MAX  
4.70  
4.70  
---  
0.63  
3.68  
2.67  
5.60  
NOTE  
E
Straight Lead  
Bent Lead  
G
* For ammo packing detailed specification, click here to visit our website  
of product packaging for details.  
www.mccsemi.com  
1 of 3  
Revision: C  
2018/02/27  

与MCR100-6-AP相关器件

型号 品牌 描述 获取价格 数据表
MCR100-6B UTC Silicon Controlled Rectifier

获取价格

MCR100-6B(SOT-89) UTC Silicon Controlled Rectifier, 800mA I(T), 400V V(DRM)

获取价格

MCR100-6B(TO-92) UTC Silicon Controlled Rectifier, 400V V(DRM)

获取价格

MCR100-6C(SOT-89) UTC Silicon Controlled Rectifier, 800mA I(T), 400V V(DRM)

获取价格

MCR100-6D JJM 门极灵敏型单向可控硅

获取价格

MCR100-6G ONSEMI Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

获取价格