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MCMA25P1600TA PDF预览

MCMA25P1600TA

更新时间: 2024-01-07 16:35:28
品牌 Logo 应用领域
力特 - LITTELFUSE 栅极
页数 文件大小 规格书
5页 391K
描述
Silicon Controlled Rectifier, 25000mA I(T), 1600V V(RRM),

MCMA25P1600TA 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.24最大直流栅极触发电流:80 mA
最大直流栅极触发电压:1.6 V快速连接描述:2G-2GR
螺丝端子的描述:A-G-AK最大维持电流:100 mA
最大漏电流:4 mA通态非重复峰值电流:430 A
最大通态电流:25000 A最高工作温度:140 °C
最低工作温度:-40 °C重复峰值反向电压:1600 V
子类别:Silicon Controlled Rectifiers触发设备类型:SCR
Base Number Matches:1

MCMA25P1600TA 数据手册

 浏览型号MCMA25P1600TA的Datasheet PDF文件第1页浏览型号MCMA25P1600TA的Datasheet PDF文件第2页浏览型号MCMA25P1600TA的Datasheet PDF文件第3页浏览型号MCMA25P1600TA的Datasheet PDF文件第4页 
MCMA25P1600TA  
Thyristor  
80  
400  
300  
103  
VR = 0 V  
50 Hz, 80% VRRM  
60  
TVJ = 45°C  
IT  
I2t  
[A2s]  
ITSM  
TVJ = 45°C  
40  
[A]  
TVJ = 125°C  
140°C  
TVJ = 140°C  
[A]  
200  
20  
TVJ = 140°C  
TVJ = 25°C  
0
100  
102  
0.5  
1.0  
1.5  
2.0  
0.01  
0.1  
1
1
2
3
4
5 6 7 8 10  
VT [V]  
t [s]  
t [ms]  
Fig. 3 I2t versus time (1-10 s)  
Fig. 2 Surge overload current  
ITSM: crest value, t: duration  
Fig. 1 Forward characteristics  
10  
100.0  
10.0  
80  
60  
40  
20  
0
1: I  
, T = 140°C  
GD VJ  
2: I , T  
GT VJ  
=
=
25°C  
3: I , T  
GT VJ  
-40°C  
dc =  
1
0.5  
0.4  
6
5
TVJ = 25°C  
4
3
0.33  
0.17  
0.08  
2
VG  
[V]  
tgd  
ITAVM  
[A]  
1
1
lim.  
typ.  
[μs]  
1.0  
0.1  
4: P  
= 0.5 W  
GAV  
GM  
5: P  
6: P  
=
5 W  
=
10 W  
GM  
0.1  
1
10  
100  
1000 10000  
0.01  
0.10  
1.00  
IG [A]  
10.00  
0
40  
80  
120  
160  
IG [mA]  
Tcase [°C]  
Fig. 6 Max. forward current at  
case temperature  
Fig. 5 Gate controlled delay time tgd  
Fig. 4 Gate voltage & gate current  
1.40  
1.20  
50  
40  
30  
20  
10  
0
dc =  
1
0.5  
0.4  
0.33  
0.17  
0.08  
RthHA  
0.4  
0.6  
0.8  
1.0  
2.0  
4.0  
Ptot  
[W]  
1.00  
ZthJC  
0.80  
[K/W]  
0.60  
0.40  
0.20  
0.00  
i
Rthi (K/W)  
ti (s)  
1
2
3
4
5
0.0200  
0.1300  
0.2400  
0.4700  
0.3400  
0.0004  
0.0090  
0.0140  
0.0700  
0.4000  
1
10  
100  
1000  
10000  
0
10  
20  
30  
0
40  
80  
Tamb [°C]  
120  
160  
t [ms]  
IT(AV) [A]  
Fig. 8 Transient thermal impedance junction to case  
Fig. 7a Power dissipation versus direct output current  
Fig. 7b and ambient temperature  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20191209d  
© 2019 IXYS all rights reserved  

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