Datasheet > MCM218165BVJ60

MCM218165BVJ60

更新时间： 2024-01-15 08:17:09

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		动态存储器光电二极管
页数	文件大小	规格书
28页	434K
描述
EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, SOJ-42

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MCM218165BVJ60 数据手册

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by MCM218165BV/D

SEMICONDUCTOR

TECHNICAL DATA

1M x 16

Advance Information

MCM218165BV

16M CMOS Wide DRAM Family

EDO

EDO, 1M x 16, and 1K Refresh

1024 Cycle Refresh

The family of 16M Dynamic RAMs is fabricated using 0.4µ CMOS

high–speed silicon–gate process technology. It includes devices organized as

1,048,576 sixteen–bit words. Advanced circuit design and fine line processing

provide high performance, improved reliability, and low cost.

The MCM218165BV is designed to operate from a single 3.3 V only power

supply.

These devices are packaged in a standard 400 mil J–lead small outline

package (SOJ) and a standard 400 mil thin–small–outline package (TSOP II).

J PACKAGE

400 MIL SOJ

CASE 986B–01

•

Single 3.3 V ± 0.3 V Power Supply

Extended Data Out (EDO) Page Mode Access

LVTTL–Compatible Inputs and Outputs (V

2 CAS Byte Control

RAS–Only Refresh

CAS Before RAS Refresh

Hidden Refresh

1024 Cycle Refresh: 16 ms

= 3.3 V)

T PACKAGE

400 MIL TSOP II

CASE 985A–01

Fast Access Time (t

RAC

MCM218165BV–60 = 60 ns (Max)

MCM218165BV–70 = 70 ns (Max)

•

Low Active Power Dissipation: 990/935 mW (Max)

Low Standby Power Dissipation: 1.8 mW (Max)

PIN NAMES

A0 – A9 . . . . . . . . . . . . . . . Address Input UCAS, LCAS . . Column Address Strobe

DQ1 – DQ16 . . . . . . . Data Input/Output

G . . . . . . . . . . . . . . . . . . . Output Enable

. . . . . . . . . . Power Supply (+ 3.3 V)

. . . . . . . . . . . . . . . . . . . . . . . . Ground

W . . . . . . . . . . . . . . . . Read/Write Enable NC . . . . . . . . . . . . . . . . . . No Connection

RAS . . . . . . . . . . . . Row Address Strobe

This document contains information on a new product. Specifications and information herein are subject to change without notice.

12/19/96

Motorola, Inc. 1996

MOTOROLA DRAM

MCM218165BV

12 3 4 5 6 7...28

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与MCM218165BVJ60相关器件

型号	品牌	描述	获取价格	数据表
MCM218165BVJ60R	MOTOROLA	1MX16 EDO DRAM, 60ns, PDSO42, 0.400 INCH, SOJ-42	获取价格
MCM218165BVJ70	MOTOROLA	EDO DRAM, 1MX16, 70ns, CMOS, PDSO42, 0.400 INCH, SOJ-42	获取价格
MCM218165BVJ70R	MOTOROLA	EDO DRAM, 1MX16, 70ns, CMOS, PDSO42, 0.400 INCH, SOJ-42	获取价格
MCM218165BVT60	MOTOROLA	1MX16 EDO DRAM, 60ns, PDSO44, 0.400 INCH, TSOP2-50/44	获取价格
MCM218165BVT60R	MOTOROLA	1MX16 EDO DRAM, 60ns, PDSO44, 0.400 INCH, TSOP2-50/44	获取价格
MCM218165BVT70	MOTOROLA	EDO DRAM, 1MX16, 70ns, CMOS, PDSO44, 0.400 INCH, TSOP2-50/44	获取价格