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MCM2301C-TP-HF PDF预览

MCM2301C-TP-HF

更新时间: 2024-02-07 02:16:36
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
4页 748K
描述
Power Field-Effect Transistor,

MCM2301C-TP-HF 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.69
Base Number Matches:1

MCM2301C-TP-HF 数据手册

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MCM2301C  
Features  
High Speed Switching  
High Density Cell Design For Low RDS(ON)  
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS  
Compliant. See Ordering Information)  
Dual  
Halogen Free Available Upon Request By Adding Suffix "-HF"  
Epoxy Meets UL 94 V-0 Flammability Rating  
Moisture Sensitivity Level 1  
P-Channel Mosfet  
Maximum Ratings  
Operating Junction Temperature Range : -55°C to +150°C  
• Storage Temperature Range : -55°C to +150°C  
DFN2020-6LA  
C
• Thermal Resistance : 62.5°C/W Junction t o Ambient  
J
D
6
F
5
4
Parameter  
Drain-source Voltage  
Value  
Symbol  
H
E
G
VDS  
VGS  
-20V  
±10V  
-4.4A  
-3.2A  
-18A  
2W  
Gate-source Volltage  
Drain Current  
2
3
1
TA=25°C  
TA=70°C  
ID  
B
A
Pulsed Drain Current(1)  
IDM  
PD  
Total Power Dissipation@ TA=25°C  
Note :1. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%.  
DIMENSIONS  
MM  
MIN MAX MIN MAX  
INCHES  
DIM  
NOTE  
Circuit and Pin Schematic  
A
B
C
D
E
F
G
H
J
0.016 0.024 0.400 0.600  
D1  
G2  
S2  
0.000  
0.050  
0.000  
0.002  
6
5
4
S2  
G2  
0.039 0.014 0.250 0.350  
0.075 0.083 1.900 2.100  
0.075 0.083 1.900 2.100  
0.006 0.014 0.150 0.350  
0.035 0.043 0.890 1.090  
0.019 0.027 0.490 0.690  
D2  
D1  
D1  
D2  
G1  
S1  
1
2
3
S1  
G1  
D2  
Pin1  
0.650 BSC.  
0.026 BSC.  
Marking: 2301C  
Rev.3-1-01012019  
1/4  
MCCSEMI.COM  

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