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MCB30P1200LB PDF预览

MCB30P1200LB

更新时间: 2023-12-06 20:13:16
品牌 Logo 应用领域
力特 - LITTELFUSE 开关光电二极管
页数 文件大小 规格书
7页 493K
描述
1200V, 40mΩ SiC MOSFET,采用相臂配置和顶部冷却SMPD-B封装。 由于SiC材料的特性,与相同电压等级的硅MOSFET相比,这款产品在开关速度和低开关损耗方面表现出色。 推荐

MCB30P1200LB 数据手册

 浏览型号MCB30P1200LB的Datasheet PDF文件第2页浏览型号MCB30P1200LB的Datasheet PDF文件第3页浏览型号MCB30P1200LB的Datasheet PDF文件第4页浏览型号MCB30P1200LB的Datasheet PDF文件第5页浏览型号MCB30P1200LB的Datasheet PDF文件第6页浏览型号MCB30P1200LB的Datasheet PDF文件第7页 
MCB30P1200LB  
ID25  
VDSS  
=
38 A  
SiC Power MOSFET  
= 1200 V  
RDS(on) max  
=
52 mΩ  
Part number  
MCB30P1200LB  
E72873  
7
T1  
T2  
4
5
3
2
9
8
Features / Advantages:  
Applications:  
Package: SMPD  
• DCB isolated backside  
• Isolation Voltage 2500 V  
• Epoxy meets UL 94V-0  
• RoHS compliant  
• High speed switching  
with low capacitances  
• High blocking voltage  
with low RDS(on)  
• Easy to parallel and simple to drive  
• Resistant to latch-up  
• Solar inverters  
• High voltage DC/DC converters  
• Motor drives  
• Switch mode power supplies  
• UPS  
• Battery chargers  
• Advanced power cycling  
• Real Kelvin source connection  
• Induction heating  
Disclaimer Notice  
Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
IXYS reserves the right to change limits, test conditions and dimensions.  
Data according ot IEC 60747 and per semiconductor unless otherwise specified  
20220131a  
© 2022 IXYS All rights reserved  
1 - 7  

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