MC54/74HC241A
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir-
V
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
– 0.5 to + 7.0
CC
V
– 0.5 to V
+ 0.5
V
in
CC
V
out
– 0.5 to V
+ 0.5
V
CC
I
± 20
mA
mA
mA
mW
in
cuit. For proper operation, V and
in
I
I
DC Output Current, per Pin
± 35
± 75
out
V
should be constrained to the
out
range GND (V or V
)
V
.
DC Supply Current, V
and GND Pins
CC
in out
CC
CC
Unused inputs must always be
tied to an appropriate logic voltage
P
D
Power Dissipation in Still Air, Plastic or Ceramic DIP†
SOIC Package†
750
500
level (e.g., either GND or V ).
CC
Unused outputs must be left open.
T
stg
Storage Temperature
– 65 to + 150
C
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
(Ceramic DIP)
260
300
* Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/ C from 65 to 125 C
Ceramic DIP: – 10 mW/ C from 100 to 125 C
SOIC Package: – 7 mW/ C from 65 to 125 C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
2.0
0
Max
Unit
V
V
CC
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
Operating Temperature, All Package Types
6.0
V , V
in out
V
CC
V
T
A
– 55 + 125
C
t , t
r f
Input Rise and Fall Time
(Figure 1)
V
CC
V
CC
V
CC
= 2.0 V
= 4.5 V
= 6.0 V
0
0
0
1000
500
400
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
– 55 to
V
CC
V
25 C
Symbol
Parameter
Test Conditions
= V – 0.1 V
85 C
125 C
Unit
V
IH
Minimum High–Level Input
Voltage
V
2.0
3.0
4.5
6.0
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
V
out
CC
20 µA
|I
|
out
V
Maximum Low–Level Input
Voltage
V
= 0.1 V
2.0
3.0
4.5
6.0
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
V
V
IL
out
|I
|
20 µA
out
V
OH
Minimum High–Level Output
Voltage
V
= V
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
in
IH
20 µA
|I
|
out
V
in
= V
|I
out
|I
out
|I
out
|
|
|
2.4 mA
6.0 mA
7.8 mA
3.0
4.5
6.0
2.48
3.98
5.48
2.34
3.84
5.34
2.2
3.7
5.2
IH
V
OL
Maximum Low–Level Output
Voltage
V
= V
|
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
in
IL
20 µA
|I
out
V
in
= V
|I
out
|I
out
|I
out
|
|
|
2.4 mA
6.0 mA
7.8 mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.4
0.4
0.4
IL
MOTOROLA
2
High–Speed CMOS Logic Data
DL129 — Rev 6