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MC14513B_06 PDF预览

MC14513B_06

更新时间: 2024-01-10 19:26:35
品牌 Logo 应用领域
安森美 - ONSEMI 解码器驱动器锁存器
页数 文件大小 规格书
10页 108K
描述
BCD−To−Seven Segment Latch/Decoder/Driver CMOS MSI (Low−Power Complementary MOS)

MC14513B_06 数据手册

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MC14513B  
BCD−To−Seven Segment  
Latch/Decoder/Driver  
CMOS MSI  
(Low−Power Complementary MOS)  
The MC14513B BCD−to−seven segment latch/decoder/driver is  
constructed with complementary MOS (CMOS) enhancement mode  
devices and NPN bipolar output drivers in a single monolithic structure.  
The circuit provides the functions of a 4−bit storage latch, an 8421  
BCD−to−seven segment decoder, and has output drive capability. Lamp  
test (LT), blanking (BI), and latch enable (LE) inputs are used to test the  
display, to turn−off or pulse modulate the brightness of the display, and  
to store a BCD code, respectively. The Ripple Blanking Input (RBI) and  
Ripple Blanking Output (RBO) can be used to suppress either leading  
or trailing zeroes. It can be used with seven−segment light emitting  
diodes (LED), incandescent, fluorescent, gas discharge, or liquid crystal  
readouts either directly or indirectly.  
http://onsemi.com  
PDIP−18  
P SUFFIX  
CASE 707  
1
MARKING DIAGRAM  
Applications include instrument (e.g., counter, DVM, etc.) display  
driver, computer/calculator display driver, cockpit display driver, and  
various clock, watch, and timer uses.  
18  
Features  
MC14513BCP  
AWLYYWWG  
Low Logic Circuit Power Dissipation  
High−Current Sourcing Outputs (Up to 25 mA)  
Latch Storage of Binary Input  
1
Blanking Input  
A
= Assembly Location  
Lamp Test Provision  
WL = Wafer Lot  
YY = Year  
WW = Work Week  
Readout Blanking on all Illegal Input Combinations  
Lamp Intensity Modulation Capability  
Time Share (Multiplexing) Capability  
Adds Ripple Blanking In, Ripple Blanking Out to MC14511B  
Supply Voltage Range = 3.0 V to 18 V  
Capable of Driving Two Low−Power TTL Loads, One Low−Power  
Schottky TTL Load to Two HTL Loads Over the Rated Temperature  
Range  
G
= Pb−Free Package  
ORDERING INFORMATION  
Device  
Package  
Shipping  
20 Units/Rail  
20 Units/Rail  
MC14513BCP  
MC14513BCPG  
PDIP−18  
Pb−Free Package is Available*  
MAXIMUM RATINGS (Voltages Referenced to V  
PDIP−18  
(Pb−Free)  
)
SS  
Parameter  
Symbol  
Value  
0.5 to +18.0  
Unit  
V
DC Supply Voltage Range  
V
DD  
This device contains protection circuitry to protect  
the inputs against damage due to high static voltages  
or electric fields. However, it is advised that normal  
precautions be taken to avoid application of any  
voltage higher than maximum rated voltages to this  
high−impedance circuit. A destructive high current  
Input Voltage Range, All Inputs  
DC Current Drain per Input Pin  
Power Dissipation per Package (Note 1)  
Operating Temperature Range  
Storage Temperature Range  
V
−0.5 to V +0.5  
V
in  
DD  
I
10  
500  
mA  
mW  
°C  
P
D
T
A
55 to +125  
65 to +150  
25  
mode may occur if V and V are not constrained to  
in  
out  
the range V v (V or V ) v V  
.
T
stg  
°C  
SS  
in  
out  
DD  
Due to the sourcing capability of this circuit,  
Maximum Continuous Output Drive  
Current (Source) per Output  
I
mA  
OHmax  
damage can occur to the device if V is applied, and  
DD  
the outputs are shorted to V and are at a logical 1  
SS  
(See Maximum Ratings).  
Unused inputs must always be tied to an appropriate  
logic voltage level (e.g., either V or V ).  
Maximum Continuous Output Power  
(Source) per Output (Note 2)  
P
50  
mW  
OHmax  
SS  
DD  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Temperature Derating: Plastic “P and D/DW”  
*For additional information on our Pb−Free strategy  
and soldering details, please download the  
ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
Packages: – 7.0 mW/_C From 65_C To 125_C  
2. P  
= I  
(V − V  
)
OH  
OHmax  
OH  
DD  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
June, 2006 − Rev. 6  
MC14513B/D  
 

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