SEMICONDUCTOR TECHNICAL DATA
L SUFFIX
CERAMIC
CASE 726
CMOS MSI (Low–Power Complementary MOS)
The MC14513B BCD–to–seven segment latch/decoder/driver is
constructed with complementary MOS (CMOS) enhancement mode devices
and NPN bipolar output drivers in a single monolithic structure. The circuit
provides the functions of a 4–bit storage latch, an 8421 BCD–to–seven
segment decoder, and has output drive capability. Lamp test (LT), blanking
(BI), and latch enable (LE) inputs are used to test the display, to turn–off or
pulse modulate the brightness of the display, and to store a BCD code,
respectively. The Ripple Blanking Input (RBI) and Ripple Blanking Output
(RBO) can be used to suppress either leading or trailing zeroes. It can be
used with seven–segment light emitting diodes (LED), incandescent,
fluorescent, gas discharge, or liquid crystal readouts either directly or
indirectly.
P SUFFIX
PLASTIC
CASE 707
ORDERING INFORMATION
MC14XXXBCP
MC14XXXBCL
Plastic
Ceramic
T
= – 55° to 125°C for all packages.
A
PIN ASSIGNMENT
Applications include instrument (e.g., counter, DVM, etc.) display driver,
computer/calculator display driver, cockpit display driver, and various clock,
watch, and timer uses.
B
C
1
2
3
4
5
6
7
8
9
18
17
16
15
14
13
12
11
10
V
DD
f
•
•
•
•
•
•
•
•
•
•
•
Low Logic Circuit Power Dissipation
High–current Sourcing Outputs (Up to 25 mA)
Latch Storage of Binary Input
Blanking Input
Lamp Test Provision
Readout Blanking on all Illegal Input Combinations
Lamp Intensity Modulation Capability
Time Share (Multiplexing) Capability
Adds Ripple Blanking In, Ripple Blanking Out to MC14511B
Supply Voltage Range = 3.0 V to 18 V
Capable of Driving Two Low–Power TTL Loads, One Low–power
Schottky TTL Load to Two HTL Loads Over the Rated Temperature
Range.
LT
BI
LE
D
g
a
b
c
d
e
a
f
g
b
e
c
d
A
RBI
V
RBO
SS
DISPLAY
0
1
2
3
4
5
6
7
8
9
MAXIMUM RATINGS* (Voltages Referenced to V
)
SS
TRUTH TABLE
Rating
DC Supply Voltage
Symbol
Value
Unit
V
Inputs
RBI LE BI LT
Outputs
D
X
X
C
X
X
B
X
X
A RBO
a
1
0
b
1
0
c
1
0
d
1
0
e
1
0
f
g
1
0
Display
8
V
DD
– 0.5 to + 18
X
X
X
X
X
0
0
1
X
X
+
+
1
0
Input Voltage, All Inputs
V
in
– 0.5 to V
DD
+0.5
V
Blank
1
0
0
0
1
1
1
1
0
0
0
0
0
0
0
0
1
0
0
1
0
1
0
1
0
1
0
1
0
1
0
0
Blank
0
DC Current Drain per Input Pin
Operating Temperature Range
Power Dissipation, per Package†
Storage Temperature Range
I
10
mA
°C
X
X
X
X
X
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
0
1
1
0
0
1
0
1
0
1
0
0
0
0
0
0
1
1
0
1
1
1
1
1
0
1
0
1
1
1
0
1
1
0
1
0
1
0
0
0
0
0
0
1
1
0
1
1
1
1
1
2
3
4
5
T
A
– 55 to + 125
500
P
D
mW
C
T
– 65 to + 150
25
stg
X
X
X
X
X
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
0
0
1
1
1
1
1
0
0
0
1
1
0
0
1
0
1
0
1
0
0
0
0
0
0
0
1
1
1
0
1
1
1
1
0
0
1
1
1
0
1
0
1
1
0
1
0
1
0
0
1
0
1
1
0
1
0
1
1
0
6
7
8
Maximum Continuous Output Drive Current
(Source) per Output
I
mA
OHmax
9
Blank
Maximum Continuous Output Power
(Source) per Output ‡
P
50
mW
OHmax
X
X
X
X
X
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
1
1
1
1
1
0
0
1
1
1
0
1
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Blank
Blank
Blank
Blank
Blank
‡P
= I
(V
– V )
OH
OHmax OH DD
* Maximum Ratings are those values beyond which damage to the device may occur.
†Temperature Derating:
X
1
1
1
X
X
X
X
†
*
*
Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
Ceramic “L” Packages: – 12 mW/ C From 100 C To 125 C
X = Don’t Care
†RBO = RBI (D C B A), indicated by other rows of table
*Depends upon the BCD code previously applied when LE = 0
REV 3
1/94
Motorola, Inc. 1995
MC14513B
MOTOROLA CMOS LOGIC DATA
376