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MC14513BCP PDF预览

MC14513BCP

更新时间: 2024-02-03 07:29:55
品牌 Logo 应用领域
安森美 - ONSEMI 解码器驱动器锁存器逻辑集成电路光电二极管
页数 文件大小 规格书
12页 189K
描述
BCD-To-Seven Segment Latch/Decoder/Driver

MC14513BCP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DIP包装说明:LEAD FREE, PLASTIC, DIP-18
针数:18Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:8.37系列:4000/14000/40000
输入调节:LATCHEDJESD-30 代码:R-PDIP-T18
JESD-609代码:e3长度:22.73 mm
逻辑集成电路类型:SEVEN SEGMENT DECODER/DRIVER功能数量:1
端子数量:18最高工作温度:125 °C
最低工作温度:-55 °C输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP18,.3封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
电源:5/15 V传播延迟(tpd):1440 ns
认证状态:Not Qualified座面最大高度:4.57 mm
子类别:Decoder/Drivers最大供电电压 (Vsup):18 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:MILITARY端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:7.62 mmBase Number Matches:1

MC14513BCP 数据手册

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CMOS MSI  
(Low–Power Complementary MOS)  
http://onsemi.com  
The MC14513B BCD–to–seven segment latch/decoder/driver is  
constructed with complementary MOS (CMOS) enhancement mode  
devices and NPN bipolar output drivers in a single monolithic structure.  
The circuit provides the functions of a 4–bit storage latch, an 8421  
BCD–to–seven segment decoder, and has output drive capability. Lamp  
test (LT), blanking (BI), and latch enable (LE) inputs are used to test the  
display, to turn–off or pulse modulate the brightness of the display, and  
to store a BCD code, respectively. The Ripple Blanking Input (RBI) and  
Ripple Blanking Output (RBO) can be used to suppress either leading  
or trailing zeroes. It can be used with seven–segment light emitting  
diodes (LED), incandescent, fluorescent, gas discharge, or liquid crystal  
readouts either directly or indirectly.  
MARKING  
DIAGRAMS  
18  
1
Applications include instrument (e.g., counter, DVM, etc.) display  
driver, computer/calculator display driver, cockpit display driver, and  
various clock, watch, and timer uses.  
PDIP–18  
P SUFFIX  
CASE 707  
MC14513BCP  
AWLYYWW  
Low Logic Circuit Power Dissipation  
High–current Sourcing Outputs (Up to 25 mA)  
Latch Storage of Binary Input  
Blanking Input  
Lamp Test Provision  
A
= Assembly Location  
WL or L = Wafer Lot  
YY or Y = Year  
WW or W = Work Week  
Readout Blanking on all Illegal Input Combinations  
Lamp Intensity Modulation Capability  
Time Share (Multiplexing) Capability  
Adds Ripple Blanking In, Ripple Blanking Out to MC14511B  
Supply Voltage Range = 3.0 V to 18 V  
ORDERING INFORMATION  
Device  
MC14513BCP  
Package  
Shipping  
20/Rail  
PDIP–18  
Capable of Driving Two Low–Power TTL Loads, One Low–power  
This device contains protection circuitry to protect  
the inputs against damage due to high static voltages  
or electric fields. However, it is advised that normal  
precautions be taken to avoid application of any volt-  
age higher than maximum rated voltages to this high–  
impedance circuit. A destructive high current mode  
Schottky TTL Load to Two HTL Loads Over the Rated Temperature  
Range.  
(1.)  
MAXIMUM RATINGS (Voltages Referenced to V  
)
SS  
Symbol  
Parameter  
Value  
0.5 to +18.0  
Unit  
V
may occur if V and V are not constrained to the  
in  
out  
V
DD  
DC Supply Voltage Range  
Input Voltage Range, All Inputs  
DC Current Drain per Input Pin  
Power Dissipation,  
range V  
(V or V  
)
V
DD  
.
SS  
in  
out  
Due to the sourcing capability of this circuit, dam-  
age can occur to the device if V is applied, and the  
V
in  
0.5 to V + 0.5  
V
DD  
DD  
I
10  
mA  
mW  
outputs are shorted to V and are at a logical 1 (See  
SS  
Maximum Ratings).  
Unused inputs must always be tied to an appropri-  
P
D
500  
(2.)  
per Package  
ate logic voltage level (e.g., either V or V ).  
SS  
DD  
T
Operating Temperature Range  
Storage Temperature Range  
55 to +125  
65 to +150  
25  
°C  
°C  
A
T
stg  
1. Maximum Ratings are those values beyond which  
damage to the device may occur.  
2. Temperature Derating:  
I
Maximum Continuous Output  
mA  
OHmax  
Drive Current (Source) per Output  
P
Maximum Continuous Output  
Power (Source) per Output  
50  
mW  
Plastic “P and D/DW” Packages: – 7.0 mW/ C  
From 65 C To 125 C  
OHmax  
(3.)  
3. P  
= I (V – V  
)
OHmax  
OH  
DD  
OH  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
March, 2000 – Rev. 3  
MC14513B/D  

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