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MC14512BDR2G PDF预览

MC14512BDR2G

更新时间: 2024-02-21 07:49:43
品牌 Logo 应用领域
安森美 - ONSEMI 解复用器逻辑集成电路光电二极管
页数 文件大小 规格书
7页 94K
描述
8−Channel Data Selector

MC14512BDR2G 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOIC
包装说明:LEAD FREE, SOIC-16针数:16
Reach Compliance Code:compliantHTS代码:8542.39.00.01
Factory Lead Time:1 week风险等级:0.65
Is Samacsys:N系列:4000/14000/40000
JESD-30 代码:R-PDSO-G16JESD-609代码:e3
长度:9.9 mm负载电容(CL):50 pF
逻辑集成电路类型:MULTIPLEXER湿度敏感等级:1
功能数量:1输入次数:8
输出次数:1端子数量:16
最高工作温度:125 °C最低工作温度:-55 °C
输出特性:3-STATE输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP16,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE包装方法:TAPE AND REEL
峰值回流温度(摄氏度):260电源:5/15 V
Prop。Delay @ Nom-Sup:650 ns传播延迟(tpd):650 ns
认证状态:Not Qualified座面最大高度:1.75 mm
子类别:Multiplexer/Demultiplexers最大供电电压 (Vsup):18 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3.9 mmBase Number Matches:1

MC14512BDR2G 数据手册

 浏览型号MC14512BDR2G的Datasheet PDF文件第2页浏览型号MC14512BDR2G的Datasheet PDF文件第3页浏览型号MC14512BDR2G的Datasheet PDF文件第4页浏览型号MC14512BDR2G的Datasheet PDF文件第5页浏览型号MC14512BDR2G的Datasheet PDF文件第6页浏览型号MC14512BDR2G的Datasheet PDF文件第7页 
MC14512B  
8−Channel Data Selector  
The MC14512B is an 8−channel data selector constructed with  
MOS P−channel and N−channel enhancement mode devices in a  
single monolithic structure. This data selector finds primary  
application in signal multiplexing functions. It may also be used for  
data routing, digital signal switching, signal gating, and number  
sequence generation.  
http://onsemi.com  
Features  
MARKING  
DIAGRAMS  
Diode Protection on All Inputs  
Single Supply Operation  
16  
PDIP−16  
P SUFFIX  
CASE 648  
3−State Output (Logic “1”, Logic “0”, High Impedance)  
Supply Voltage Range = 3.0 Vdc to 18 Vdc  
Capable of Driving Two Low−power TTL Loads or One Low−power  
Schottky TTL Load Over the Rated Temperature Range  
Pb−Free Packages are Available*  
MC14512BCP  
AWLYYWWG  
1
1
16  
SOIC−16  
D SUFFIX  
CASE 751B  
14512BG  
AWLYWW  
MAXIMUM RATINGS (Voltages Referenced to V  
)
SS  
1
1
Parameter  
Symbol  
Value  
Unit  
V
DC Supply Voltage Range  
V
0.5 to +18.0  
DD  
A
= Assembly Location  
= Wafer Lot  
= Year  
= Work Week  
= Pb−Free Package  
Input or Output Voltage Range  
(DC or Transient)  
V , V  
0.5 to V  
+ 0.5  
V
in out  
DD  
WL  
YY, Y  
WW  
G
Input or Output Current  
(DC or Transient) per Pin  
I , I  
in out  
10  
mA  
Power Dissipation, Per Package (Note 1)  
Ambient Temperature Range  
P
T
500  
mW  
°C  
D
55 to +125  
65 to +150  
260  
A
ORDERING INFORMATION  
Storage Temperature Range  
T
stg  
°C  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Lead Temperature (8−Second Soldering)  
T
°C  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Temperature Derating: Plastic “P and D/DW”  
Packages: – 7.0 mW/_C From 65_C To 125_C  
This device contains protection circuitry to guard against damage due to high  
static voltages or electric fields. However, precautions must be taken to avoid  
applications of any voltage higher than maximum rated voltages to this  
high−impedance circuit. For proper operation, V and V should be constrained  
in  
out  
to the range V v (V or V ) v V  
.
DD  
SS  
in  
out  
Unused inputs must always be tied to an appropriate logic voltage level  
(e.g., either V or V ). Unused outputs must be left open.  
SS  
DD  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
November, 2006 − Rev. 7  
MC14512B/D  
 

MC14512BDR2G 替代型号

型号 品牌 替代类型 描述 数据表
CD4512BM TI

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