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MC100EL07DR2G PDF预览

MC100EL07DR2G

更新时间: 2024-02-06 00:22:54
品牌 Logo 应用领域
安森美 - ONSEMI 逻辑集成电路石英晶振光电二极管
页数 文件大小 规格书
9页 145K
描述
5.0 V ECL 2-Input XOR/XNOR

MC100EL07DR2G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOIC包装说明:SOP, SOP8,.25
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
Factory Lead Time:1 week风险等级:5.31
其他特性:NECL MODE: VCC =0V WITH VEE = -4.2V TO -5.7V系列:100EL
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9 mm逻辑集成电路类型:XOR/XNOR GATE
湿度敏感等级:1功能数量:1
输入次数:2端子数量:8
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE包装方法:TR
峰值回流温度(摄氏度):260电源:-4.5 V
最大电源电流(ICC):20 mAProp。Delay @ Nom-Sup:0.435 ns
传播延迟(tpd):0.395 ns认证状态:Not Qualified
施密特触发器:NO座面最大高度:1.75 mm
子类别:Gates最大供电电压 (Vsup):5.7 V
最小供电电压 (Vsup):4.2 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:ECL
温度等级:INDUSTRIAL端子面层:Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3.9 mmBase Number Matches:1

MC100EL07DR2G 数据手册

 浏览型号MC100EL07DR2G的Datasheet PDF文件第2页浏览型号MC100EL07DR2G的Datasheet PDF文件第3页浏览型号MC100EL07DR2G的Datasheet PDF文件第4页浏览型号MC100EL07DR2G的Datasheet PDF文件第5页浏览型号MC100EL07DR2G的Datasheet PDF文件第6页浏览型号MC100EL07DR2G的Datasheet PDF文件第7页 
MC10EL07, MC100EL07  
5.0 VꢀECL  
2-Input XOR/XNOR  
The MC10EL/100EL07 is a 2-input XOR/XNOR gate. The device  
is functionally equivalent to the E107 device with higher performance  
capabilities. With propagation delays and output transition times  
significantly faster than the E107, the EL07 is ideally suited for those  
applications which require the ultimate in AC performance.  
The 100 Series contains temperature compensation.  
http://onsemi.com  
MARKING  
DIAGRAMS*  
Features  
260 ps Propagation Delay  
8
8
1
8
1
HEL07  
KEL07  
ALYW  
G
ESD Protection: Human Body Model; > 1.0 KV  
ALYW  
Machine Model; > 100 V  
G
SOIC8  
D SUFFIX  
CASE 751  
1
PECL Mode Operating Range: V = 4.2 V to 5.7 V  
CC  
with V = 0 V  
EE  
NECL Mode Operating Range: V = 0 V  
CC  
8
1
8
8
with V = 4.2 V to 5.7 V  
EE  
1
HL07  
ALYWG  
G
KL07  
ALYWG  
G
Internal Input Pulldown Resistors  
Meets or Exceeds JEDEC Spec EIA/JESD78 IC Latchup Test  
TSSOP8  
DT SUFFIX  
CASE 948R  
1
Moisture Sensitivity Level 1  
For Additional Information, see Application Note AND8003/D  
Flammability Rating: UL 94 V0 @ 0.125 in,  
Oxygen Index: 28 to 34  
Transistor Count = 47 devices  
PbFree Packages are Available  
1
4
1
4
DFN8  
MN SUFFIX  
CASE 506AA  
H = MC10  
L
Y
= Wafer Lot  
= Year  
V
8
7
K
= MC100  
NC 1  
CC  
4P = MC10  
2D = MC100  
W = Work Week  
M = Date Code  
G
A
= Assembly Location  
= PbFree Package  
D
2
3
Q
Q
0
1
(Note: Microdot may be in either location)  
*For additional marking information, refer to  
Application Note AND8002/D.  
6
D
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
NC 4  
5 V  
EE  
Figure 1. Logic Diagram and Pinout Assignment  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
December, 2006 Rev. 6  
MC10EL07/D  

MC100EL07DR2G 替代型号

型号 品牌 替代类型 描述 数据表
MC100EL07DG ONSEMI

完全替代

5.0 V ECL 2-Input XOR/XNOR
MC100EL07D ONSEMI

完全替代

5.0 V ECL 2-Input XOR/XNOR
MC100EL07DR2 ONSEMI

类似代替

2-Input XOR/XNOR

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