Datasheet > MBRF660

MBRF660

更新时间： 2022-02-26 11:08:13

品牌	Logo	应用领域
圣诺 - SENO		/
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2页	322K
描述
6.0 A SCHOTTKY BARRIER DIODE

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MBRF660 数据手册

Zibo Seno Electronic Engineering Co., Ltd.

MBRF640 – MBRF6200

6.0 A SCHOTTKY BARRIER DIODE

Features

Schottky Barrier Chip

Ideally Suited for Automatic Assembly

ITO-220AC

Min

Low Power Loss, High Efficiency

For Use in Low Voltage Application

Guard Ring Die Construction

Plastic Case Material has UL Flammability

Cꢀ lꢀaꢀsꢀsꢀification Rating 94V-O

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

Dim

Max

15.50

10.50

2.90

14.50

9.50

2.55

PIN1

3.30

4.30

13.00

0.30

14.00

0.90

3.00 Ø

6.30

3.80 Ø

7.30

Mechanical Data

Case: ITO-220AC, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

4.20

4.80

2.50

2.90

0.47

0.75

Polarity: See Diagram

2.50

3.10

Mounting Position: Any

4.88

5.28

All Dimensions in mm

Lead Free: For RoHS / Lead Free Version

PIN 1 +

PIN 3 -

Case

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF

Units

Characteristic

Symbol

640

645

650

660

680

6100

6150

6200

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

150

200

RMS Reverse Voltage

V^R(RMS)

I^O

105

140

Average Rectified Output Current @T_L= 100°C

(Note 1)

6. 0

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

100

FSM

120

Forward Voltage

@I_F= 6A

0.70

0.80

0.85

0.92

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

0.1

I^RM

350

280

°C/W

°C

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 1)

Operating and Storage Temperature Range

200

3.0

R^ꢀ

3.5

T^j, T^STG

-55 to +150

-55 to +175

Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

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MBRF640– MBRF6200

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