Diode Semiconductor Korea
MBRF530 - - - MBRF5100
VOLTAGE RANGE: 30 - 100 V
SCHOTTKY BARRIER RECTIFIERS
CURRENT: 5.0 A
FEATURES
High surge capacity.
ITO-220AC
4.5± 0.2
For use in low voltage, high frequency inverters, free
111wheeling, and polarity protection applications.
+0.2
10.2± 0.2
3.1
-0.1
Metal silicon junction, majority carrier conduction.
High current capacity, low forward voltage drop.
The plastic material carries U/L recognition 94V-0
PIN
1
2
MECHANICAL DATA
4.0± 0.3
2.6± 0.2
Case:JEDEC ITO-220AC,molded plastic body
Terminals:Solderable per MIL-STD-750,
1.4± 0.1
0.6± 0.1
1 1
Method 2026
Polarity: As marked
Position: Any
0.6± 0.1
5.0± 0.1
Dimensions in millimeters
Weight: 0.056 ounces,1.587 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ambient temperature unless otherwise specified.
Ratings at 25
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF
UNITS
530
535
540 545
550
560
580 5100
Maximum recurrent peak reverse voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
30
35
40
28
40
45
32
45
50
60
80
56
80
100
70
V
V
V
21
25
35
42
Maximum DC blocking voltage
30
35
50
60
100
Maximum average forw ard total device11111111
IF(AV)
IFSM
5.0
A
A
m rectified current @TC = 125°C
Peak forw ard surge current 8.3ms single half
125
b
sine-w ave superimposed on rated load
Maximum forw ard
voltage
(I
)
0.80
0.85
F=5.0A
0.70
V
VF
(Note 1)
Maximum reverse current
at rated DC blocking voltage
@TA=25
0.1
15
IR
m A
@TA=100
Maximum thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
3.0
R
K/W
θJC
- 55 ---- + 150
- 55 ---- + 150
TJ
TSTG
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance f rom junction to case.
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