MBRF600150 thru MBRF600200R
VRRM = 150 V - 200 V
IF(AV) = 600 A
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 150 V to 200 V VRRM
TO-244AB Package
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
MBRF600200(R)
Parameter
Symbol
MBRF600150(R)
Unit
Repetitive peak reverse
voltage
VRRM
200
150
V
VRMS
VDC
Tj
141
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
106
V
V
200
150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
°C
Tstg
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Conditions
TC = 125 °C
MBRF600200(R)
Parameter
Symbol
IF(AV)
MBRF600150(R)
Unit
A
Average forward current
(per pkg)
600
4000
0.92
600
Peak forward surge
current (per leg)
IFSM
tp = 8.3 ms, half sine
4000
A
Maximum forward voltage
(per leg)
VF
IR
I
FM = 300 A, Tj = 25 °C
V
0.88
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
1
1
Reverse current at rated
DC blocking voltage (per
leg)
10
50
mA
10
50
Thermal characteristics
Thermal resistance,
junction-case (per leg)
RΘJC
0.28
0.28
°C/W
1
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