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MBRF20100CT PDF预览

MBRF20100CT

更新时间: 2024-02-26 11:45:29
品牌 Logo 应用领域
TGS 二极管局域网
页数 文件大小 规格书
2页 1082K
描述
TO-220F Plastic-Encapsulate Diodes

MBRF20100CT 技术参数

生命周期:Obsolete包装说明:R-PSFM-T3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.14
Is Samacsys:N其他特性:FREE WHEELING DIODE, LOW POWER LOSS
应用:EFFICIENCY外壳连接:ISOLATED
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大非重复峰值正向电流:150 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大重复峰值反向电压:100 V
表面贴装:NO技术:SCHOTTKY
端子面层:PURE TIN端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

MBRF20100CT 数据手册

 浏览型号MBRF20100CT的Datasheet PDF文件第2页 
TIGER ELECTRONIC CO.,LTD  
TO-220F Plastic-Encapsulate Diodes  
MBRF20100CT, 150CT, 200CT  
SCHOTTKY BARRIER RECTIFIER  
TO-220F  
1. ANODE  
2. CATHODE  
3. ANODE  
FEATURES  
Schottky Barrier Chip  
Guard Ring Die Construction for Transient Protection  
Low Power Loss,High Efficiency  
High Surge Capability  
High Current Capability and Low Forward Voltage Drop  
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,  
and Polarity Protection Applications  
MAXIMUM RATINGS ( Ta=25unless otherwise noted )  
Value  
Unit  
Symbol  
Parameter  
MBRF20100CT MBRF20150CT  
MBRF20200CT  
Peak repetitive reverse voltage  
Working peak reverse voltage  
DC blocking voltage  
VRRM  
VRWM  
VR  
100  
70  
150  
200  
140  
V
RMS reverse voltage  
105  
20  
V
A
VR(RMS)  
IO  
Average rectified output current  
Non-Repetitive peak forward surge current  
8.3ms half sine wave  
150  
A
IFSM  
Power dissipation  
2
50  
W
/W  
PD  
RΘJA  
Tj  
Thermal resistance from junction to ambient  
Junction temperature  
125  
Storage temperature  
-55~+150  
Tstg  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
Device  
Test conditions  
Min  
Typ  
Max  
Unit  
MBRF20100CT  
100  
150  
200  
V(BR)  
IR=1mA  
V
Reverse voltage  
MBRF20150CT  
MBRF20200CT  
MBRF20100CT  
VR=100V  
VR=150V  
VR=200V  
0.15  
IR  
mA  
V
Reverse current  
MBRF20150CT  
MBRF20200CT  
MBRF20100CT  
0.1  
0.1  
0.85  
VF  
IF=10A  
Forward voltage  
MBRF20150CT  
MBRF20200CT  
0.9  
0.9  
Ctot  
MBRF20100CT- 20200CT  
VR=5V,f=1MHz  
1000  
pF  
Typical total capacitance  
B,Apr,2012  

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